The present invention is a method and apparatus relating to manufacturing nanostructure patterns and components using molecular science. The method includes overlaying a multilayer organic molecule resist on at least a portion of a parent structure selectively deposited on a substrate, depositing a layer over the parent structure and in contact with at least a portion of the multilayer organic resist, and removing the multilayer organic molecule resist to leave a residual structure.

/pdf/molecular-ruler-for-scaling-down-nanostructures-ctz7lc7kgp.pdf

Molecular ruler for scaling down nanostructures

bases were introduced in [Smy77] where they are called “R-structures”. Examples of abstract bases are concrete bases of continuous domains, of course, where the relation≺ is the restriction of the order of approximation. Axiom (INT) is satisfied because of Lemma 2.2.15 and because we have required bases in domains to have directed sets of approximants for each element. Other examples are partially ordered sets, where (INT) is satisfied because of reflexivity. We will shortly identify posets as being exactly the bases of compact elements of algebraic domains. In what follows we will use the terminology developed at the beginning of this chapter, even though the relation ≺ on an abstract basis need neither be reflexive nor antisymmetric. This is convenient but in some instances looks more innocent than it is. An idealA in a basis, for example, has the property (following from directedness) that for everyx ∈ A there is another element y ∈ A with x ≺ y. In posets this doesn’t mean anything but here it becomes an important feature. Sometimes this is stressed by using the expression ‘ A is a round ideal’. Note that a set of the form↓x is always an ideal because of (INT) but that it need not contain x itself. We will refrain from calling ↓x ‘principal’ in these circumstances. Definition 2.2.21. For a basis〈B,≺〉 let Idl(B) be the set of all ideals ordered by inclusion. It is called theideal completionof B. Furthermore, leti : B → Idl(B) denote the function which maps x ∈ B to ↓x. If we want to stress the relation with whichB is equipped then we write Idl(B,≺) for the ideal completion. Proposition 2.2.22.Let 〈B,≺〉 be an abstract basis.

Domain theory

Large-scale arrays of highly oriented hexagonal ZnO nanorods and nanotubes were fabricated on arbitrary ZnO-film-coated substrates using a low-temperature chemical-liquid-phase deposition method. The obtained nanoproducts were characterized, and the growth mechanism is proposed.

A general low-temperature route for large-scale fabrication of highly oriented ZnO nanorod/nanotube arrays.

Magnetic domain structures in thin foils may be revealed in a number of ways in the transmission electron microscope. The most commonly used modes (Fresnel, Foucault, holographic, differential phase contrast and low angle diffraction) are described and intercompared. The Fresnel and Foucault modes are simple to implement but provide a mainly qualitative description of the spatial variation of induction throughout the foil. Quantitative information may be obtained from the other two imaging modes but they require more sophisticated equipment. Electron diffraction is particularly useful for studying periodic magnetic structures. Examples of the use of these, and further specialised techniques, are presented by reference to some applications of current interest within magnetism.

https://iopscience.iop.org/article/10.1088/0022-3727/17/4/003/pdf

The investigation of magnetic domain structures in thin foils by electron microscopy

Synthesis and Characterization of Fe-doped ZnO Thin Films Deposited by Chemical Spray Pyrolysis

Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c (0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5×10 −3  Ω cm and the mobility increased from 2 to 37 cm 2  V −1  s −1 when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10 20  cm −3 . Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 μm.

S. Hamzaoui

Papers

Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

Annealing effect on properties of transparent and conducting ZnO thin films

Beneficial effects of hydrogen peroxide on growth, structural and electrical properties of sprayed fluorine-doped SnO2 films

Electrical Characterization of n-ZnO/p-Si Heterojunction Prepared by Spray Pyrolysis Technique

Growth of ZnO thin film on SiO2/Si substrate by pulsed laser deposition and study of their physical properties