Experimental studies of chalcogenide passivation (by sulfur and selenium atoms) of III–V semiconductor surfaces are analyzed. The characteristic features of chemical-bond formation, the atomic structure, and the electronic properties of III–V semiconductor surfaces coated with chalcogenide atoms are examined. Advances in recent years in the application of chalcogenide passivation in semiconductor technology and trends and prospects for further development of this direction are discussed.

Chalcogenide passivation of III–V semiconductor surfaces

Beyond graphene, transitional metal dichalcogenides, and black phosphorus, there are other layered materials called metal thiophosphites (MPSx), which are recently attracting the attention of scientists. Here we present the synthesis, structural and morphological characterization, magnetic properties, electrochemical performance, and the calculated density of states of different layered metal thiophosphite materials with a general formula MPSx, and as a result of varying the metal component, we obtain CrPS4, MnPS3, FePS3, CoPS3, NiPS3, ZnPS3, CdPS3, GaPS4, SnPS3, and BiPS4. SnPS3, ZnPS3, CdPS3, GaPS4, and BiPS4 exhibit only diamagnetic behavior due to core electrons. By contrast, trisulfides with M = Mn, Fe, Co, and Ni, as well as CrPS4, are paramagnetic at high temperatures and undergo a transition to antiferromagnetic state on cooling. Within the trisulfides series the Neel temperature characterizing the transition from paramagnetic to antiferromagnetic phase increases with the increasing atomic number ...

Layered Metal Thiophosphite Materials: Magnetic, Electrochemical, and Electronic Properties

A highly stable crystalline S‐passivated InP(100) surface has been obtained by a simple wet chemical process, using illumination and heated (NH4)2S solution. Low‐energy electron diffraction studies show a (1×1) diffraction pattern, which persists even after 3 days of exposure to the atmosphere. High‐resolution photoemission studies show that the surface is terminated with a monolayer of sulfur, which forms bridge bonds only to indium. The P 2p core level is identical to that of a vacuum‐cleaved InP surface. A possible structural model is presented.

S-passivated InP (100)-(1×1) surface prepared by a wet chemical process

Thermally grown SiO2 layers on Si (100) substrate have been subjected to different external voltage bias during XPS analysis to induce changes in the measured binding energy difference between Si4+ and Si0 in Si2p and SiKLL regions. The Si2p binding energy difference increases from 3.2 to 4.8 for samples containing 1−7 nm oxide thickness, and furthermore, this difference can be influenced by application of an external bias to the sample. Application of negative d.c. bias increases the binding energy difference, whereas positive bias decreases it. The voltage dependence of the binding energy difference exhibits a sigmoid character with an abrupt change near 0 V. Both the binding energy difference and differential change between the positive and negative bias have similar functional dependence on the thickness. This is attributed to differential charging between the silicon oxide layer and silicon substrate, which is decreased when a positive bias is applied to the sample (and therefore attracting a larger ...

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XPS studies of SiO2/Si system under external bias

A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.

Semiconductor Device and Method of Fabricating the Same

The changes in chemical composition and Fermi level position of n‐ and p‐InP surfaces induced by reactions with sodium sulfide and ammonium sulfide solutions and with vapor from ammonium sulfide solution have been characterized by x‐ray photoelectron spectroscopy (XPS). Further, in situ XPS analysis was used to study interfaces formed on sulfide passivated surfaces by remote plasma enhanced chemical vapor deposition of silicon nitride. We found that both indium and phosphorus sulfide phases were formed as a result of exposing InP to sulfide vapor at room temperature. However, most of the surface native sulfides dissolved in water and the resultant surface was then covered with about one monolayer of indium sulfide. Further, reduction in donor states in the upper band gap was evident by these sulfide treatments. However, heating the sulfide passivated sample caused an increase in surface states. Sulfur doping effect was also observed upon heating InP covered with the air oxidation products of the sulfide v...

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Papers

In situ x‐ray photoelectron spectroscopic study of remote plasma enhanced chemical vapor deposition of silicon nitride on sulfide passivated InP