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S. Rousset

Researcher at University of Paris

Publications -  24
Citations -  536

S. Rousset is an academic researcher from University of Paris. The author has contributed to research in topics: Scanning tunneling microscope & Scanning tunneling spectroscopy. The author has an hindex of 11, co-authored 24 publications receiving 478 citations. Previous affiliations of S. Rousset include Centre national de la recherche scientifique & Paris Diderot University.

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Localized state and charge transfer in nitrogen-doped graphene

TL;DR: In this article, the simple substitution of carbon with nitrogen atoms has been identified as the most common doping configuration, indicating a reduction of local charge density on top of the nitrogen atoms and a charge transfer to the neighboring carbon atoms.
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Large magnetoresistance through a single molecule due to a spin-split hybridized orbital.

TL;DR: Coupling state-of-the-art spin-polarized scanning tunneling spectroscopy and spin-resolved ab initio calculations, the first experimental evidence of the spin splitting of a molecular orbital on a single non magnetic C(60) molecule in contact with a magnetic material, namely, the Cr(001) surface is given.
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Electronic interaction between nitrogen-doped graphene and porphyrin molecules.

TL;DR: These data show how the presence of nitrogen atoms in the graphene network modifies the electronic interaction of organic molecules with graphene, providing a basic understanding for the exploitation of doped graphene in molecular sensors or nanoelectronics.
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Grain boundaries in graphene on SiC(0001̅) substrate.

TL;DR: Grain boundaries in epitaxial graphene on the SiC(0001) substrate are studied using scanning tunneling microscopy and spectroscopy in this paper, where the critical misorientation angle of buckling transition is determined.
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Spin-wave-assisted thermal reversal of epitaxial perpendicular magnetic nanodots.

TL;DR: The magnetic susceptibility of self-organized two-dimensional Co nanodots on Au(111) has been measured as a function of their size in the 2-7 nm diameter range and it is shown that the activation energy for the thermal reversal displays a power law behavior with the dot volume.