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Salvatore Iannotta

Researcher at National Research Council

Publications -  183
Citations -  4783

Salvatore Iannotta is an academic researcher from National Research Council. The author has contributed to research in topics: Thin film & PEDOT:PSS. The author has an hindex of 34, co-authored 180 publications receiving 4162 citations. Previous affiliations of Salvatore Iannotta include Ludwig Maximilian University of Munich & University of Calabria.

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Pentacene Thin Film Growth

TL;DR: In this paper, the authors discuss the processes involved in pentacene film growth, emphasizing differences with respect to inorganic films and the influence of growth parameters such as substrate nature and temperature, the deposition rate, and the kinetic energy of the molecular beam on the structure and morphology of Pentacene films.
BookDOI

Cluster Beam Synthesis of Nanostructured Materials

TL;DR: In this article, a semi-empirical approach to cluster clustering in Free Jets is presented. But it does not address the problem of the number of clusters in the free jet.
Journal ArticleDOI

New opportunities for organic electronics and bioelectronics: ions in action

TL;DR: In this article, the coupling of ionic and electronic transport in organic electronic devices, focusing on electrolyte-gated transistors, is discussed, where the authors show that such transistors can be operated at low electrical bias and permit unprecedented charge carrier densities within the transistor channel.
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Hyperthermal molecular beam deposition of highly ordered organic thin films.

TL;DR: In this paper, a seeded supersonic molecular beam was used to control the kinetic energy of pentacene during deposition and growth on Ag(111), and a new ordered phase was formed, whose in-plane lattice spacings matched one of the bulk crystal planes.
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Effect of the gate electrode on the response of organic electrochemical transistors

TL;DR: In this paper, the effect of the gate electrode material on the response of OECTs was investigated and it was shown that OECT with Ag gate electrodes show larger current modulation compared to OECT devices with Pt gate electrodes.