S
Samriddhi Raut
Researcher at Maharaja Surajmal Institute of Technology
Publications - 5
Citations - 34
Samriddhi Raut is an academic researcher from Maharaja Surajmal Institute of Technology. The author has contributed to research in topics: Random forest & Artificial neural network. The author has an hindex of 1, co-authored 4 publications receiving 7 citations.
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Journal ArticleDOI
Candle soot-coated egg carton material for oil water separation and detergent adsorption
TL;DR: In this paper, a hydrophobic and super-oleophilic adsorbent was prepared by coating candle soot (CS) on the surface of a recycled egg carton material (ECM).
Journal ArticleDOI
Robust and Secure Digital Image Watermarking Technique Using Arnold Transform and Memristive Chaotic Oscillators
Khushwant Sehra,Samriddhi Raut,Ashutosh Mishra,Poonam Kasturi,Shweta Wadhera,Geetika Jain Saxena,Manoj Saxena +6 more
TL;DR: In this paper, a robust and secure digital image watermarking is proposed, which exploits the chaotic behaviour of the non-linear oscillators realized through Memristive diodes.
Book ChapterDOI
Comparative Study on Machine Learning Classifiers for Epileptic Seizure Detection in Reference to EEG Signals
Samriddhi Raut,Neeru Rathee +1 more
TL;DR: The classifiers explored in the presented work include random forest classifier, support vector machine, Naive Bayes, k-nearest neighbor, decision trees, artificial neural network, and logistic regression.
Journal ArticleDOI
Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier
Journal ArticleDOI
Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations
Ashutosh Mishra,Samriddhi Raut,Khushwant Sehra,Raghvendra Pratap Singh,Shweta Wadhera,Poonam Kasturi,Geetika Jain Saxena,Manoj Saxena +7 more
TL;DR: An inclusive view of device physics using various device parameters has been presented, which helps to develop insights into structural architecture, DC, and RF performance of the device, and its trade‐off as a function of frequency and biases, all in one go.