Long viewed as a topic in classical physics, ferroelectricity can be described by a quantum mechanical ab initio theory. Thin-film nanoscale device structures integrated onto Si chips have made inroads into the semiconductor industry. Recent prototype applications include ultrafast switching, cheap room-temperature magnetic-field detectors, piezoelectric nanotubes for microfluidic systems, electrocaloric coolers for computers, phased-array radar, and three-dimensional trenched capacitors for dynamic random access memories. Terabit-per-square-inch ferroelectric arrays of lead zirconate titanate have been reported on Pt nanowire interconnects and nanorings with 5-nanometer diameters. Finally, electron emission from ferroelectrics yields cheap, high-power microwave devices and miniature x-ray and neutron sources.

http://science.sciencemag.org/content/sci/315/5814/954.full.pdf

Applications of Modern Ferroelectrics

A review of the properties of ferroelectric materials that are relevant to microwave tunable devices is presented: we discuss the theory of dielectric response of tunable bulk materials and thin films; the experimental results from the literature and from own work are reviewed; the correspondence between the theoretical results and the measured properties of tunable materials is critically analyzed; nominally pure, real (defected), and composite bulk materials and thin films are addressed. In addition, techniques for characterization of tunable ferroelectrics and applications of these materials are briefly presented.

Ferroelectric materials for microwave tunable applications

Optical constant spectra for silicon and thermally grown silicon dioxide have been simultaneously determined using variable angle of incidence spectroscopic ellipsometry from 0.75 to 6.5 eV. Spectroscopic ellipsometric data sets acquired at multiple angles of incidence from seven samples with oxide thicknesses from 2 to 350 nm were analyzed using a self-contained multi-sample technique to obtain Kramers–Kronig consistent optical constant spectra. The investigation used a systematic approach utilizing optical models of increasing complexity in order to investigate the need for fitting the thermal SiO2 optical constants and including an interface layer between the silicon and SiO2 in modeling the data. A detailed study was made of parameter correlation effects involving the optical constants used for the interface layer. The resulting thermal silicon dioxide optical constants were shown to be independent of the precise substrate model used, and were found to be approximately 0.4% higher in index than publis...

/pdf/ellipsometric-determination-of-optical-constants-for-silicon-53j45hftlh.pdf

Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation

A highly regular mesh of hexagonal boron nitride with a 3-nanometer periodicity and a 2-nanometer hole size was formed by self-assembly on a Rh(111) single crystalline surface. Two layers of mesh cover the surface uniformly after high-temperature exposure of the clean rhodium surface to borazine (HBNH) 3 . The two layers are offset in such a way as to expose a minimum metal surface area. Hole formation is likely driven by the lattice mismatch of the film and the rhodium substrate. This regular nanostructure is thermally very stable and can serve as a template to organize molecules, as is exemplified by the decoration of the mesh by C 60 molecules.

http://science.sciencemag.org/content/sci/303/5655/217.full.pdf

Boron nitride nanomesh.

Hard amorphous (diamond-like) carbons

Coverage includes: thin films; semiconductors; gallium arsenide; friction-reducing coatings; and tribological properties.

Synthesis and Properties of Boron Nitride

The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-Al(x)Ga(1-x)As-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples.

Variable angle of incidence spectroscopic ellipsometry: Application to GaAs‐AlxGa1−xAs multiple heterostructures

Three models for the dielectric function of Al(x)Ga(1-x)As are reviewed. All are based on measured optical constants at discrete compositions. The validity of each model near critical point energies, and otherwise, is evaluated. Only the energy-shift model is appropriate over the entire available spectrum (1.5-6.0 eV), including the band-gap region.

/pdf/modeling-alxga1-xas-optical-constants-as-functions-of-235qy2rjeg.pdf

Modeling AlxGa1−xAs optical constants as functions of composition

Properties and Characterization of Amorphous Carbon Films

Both ex situ and in situ spectroscopic ellipsometry (SE) measurements were employed to investigate the effect of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that, after a 20-sec 9:1 HF dip without rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed, in an ultrahigh vacuum chamber (UHV), and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface layer, after being heated to about 550 C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.

/pdf/spectroscopic-ellipsometry-studies-of-hf-treated-si-100-5estww96s8.pdf

Samuel A. Alterovitz

Papers

Synthesis and Properties of Boron Nitride

Variable angle of incidence spectroscopic ellipsometry: Application to GaAs‐AlxGa1−xAs multiple heterostructures

Modeling AlxGa1−xAs optical constants as functions of composition

Properties and Characterization of Amorphous Carbon Films

Spectroscopic ellipsometry studies of HF treated Si (100) surfaces