S
Samuel Jonas Wind
Researcher at IBM
Publications - 4
Citations - 120
Samuel Jonas Wind is an academic researcher from IBM. The author has contributed to research in topics: Gate oxide & Field-effect transistor. The author has an hindex of 4, co-authored 4 publications receiving 120 citations.
Papers
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Patent
Method of making self-aligned dual gate MOSFET with an ultranarrow channel
Sandip Tiwari,Samuel Jonas Wind +1 more
TL;DR: In this article, a dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in the range from 2.5 nm to 100 nm.
Patent
Electron beam proximity correction method for hierarchical design data
TL;DR: In this paper, a method for formulating an exposure dose for an electron beam on a resist film for a pattern of geometric shapes which compensates for electron scattering effects utilizing hierarchial design data which is preserved to as great as an extent as possible in the computation of the exposure dose.
Patent
Vertical transport MOSFETs and method for making the same
TL;DR: In this paper, a first semiconductor region formed in the semiconductor substrate on which the MOSFET is to be integrated is defined by n+-type doping, a thin and short semiconductor channel being arranged perpendicular with respect to the substrate, said channel being in homo-epitaxial alignment with the first region and a gate oxide layer formed on the opposite end of the channel.
Patent
Self-aligned dual gate MOSFET with an ultranarrow channel
Sandip Tiwari,Samuel Jonas Wind +1 more
TL;DR: In this paper, a dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in the range from 2.5 nm to 100 nm.