J
James H. Comfort
Researcher at IBM
Publications - 60
Citations - 2817
James H. Comfort is an academic researcher from IBM. The author has contributed to research in topics: Bipolar junction transistor & Transistor. The author has an hindex of 29, co-authored 60 publications receiving 2809 citations.
Papers
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Journal ArticleDOI
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
Gary L. Patton,James H. Comfort,Bernard S. Meyerson,Emmanuel F. Crabbe,G. Scilla,E. de Fresart,J.M.C. Stork,J.Y.-C. Sun,David L. Harame,Joachim N. Burghartz +9 more
TL;DR: In this article, the fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator, and an emitter width of 0.9 mu m is discussed.
Journal ArticleDOI
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
David L. Harame,James H. Comfort,John D. Cressler,Emmanuel F. Crabbe,J.Y.-C. Sun,Bernard S. Meyerson,T. Tice +6 more
TL;DR: A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application.
Journal ArticleDOI
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
David L. Harame,James H. Comfort,John D. Cressler,Emmanuel F. Crabbe,J.Y.-C. Sun,Bernard S. Meyerson,T. Tice +6 more
TL;DR: In this paper, a detailed review of a full SiGe HBT BiCMOS process is presented, with a description of a 12-bit Digital-to-Analog Converter.
Journal ArticleDOI
Silicon:germanium heterojunction bipolar transistors: from experiment to technology
Bernard S. Meyerson,David L. Harame,J.M.C. Stork,Emmanuel F. Crabbe,James H. Comfort,Gary L. Patton +5 more
TL;DR: In this article, the first integrated circuits in the silicon:germanium materials system were presented, with the first IC components being SiGe HBT based 1 Ghz, 12 bit, digital to analog converters.
Patent
Plating of noble metal electrodes for DRAM and FRAM
Panayotis C. Andricacos,James H. Comfort,Alfred Grill,David E. Kotecki,Vishnubhai Vitthalbhai Patel,Katherine L. Saenger,Alejandro G. Schrott +6 more
TL;DR: In this article, a diamond-like carbon mask is used in the plating process of a preexisting seed layer for DRAM and FRAM electrodes, and a self-aligned process is disclosed for selectively coating insulators in a through-mask process.