This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.

Medical device applications of nanostructured surfaces

Methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided. Hemostatic materials and structures are provided that induce platelet binding, including platelet binding and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause. Example embodiments include platelet binding devices, hemostatic bandages, hemostatic plugs, and hemostatic formulations. The hemostatic materials and structures may incorporate nanostructures and/or further hemostatic elements such as polymers, silicon nanofibers, silicon dioxide nanofibers, and/or glass beads into a highly absorbent, gelling scaffold. The hemostatic materials and structures may be resorbable.

Nanostructure-Enhanced Platelet Binding and Hemostatic Structures

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Release Strategies for Making Transferable Semiconductor Structures, Devices and Device Components

The methods and apparatus 300 disclosed herein concern Raman spectroscopy using metal coated nanocrystalline porous silicon substrates 240, 340. In certain embodiments of the invention, porous silicon substrates 110, 210 may be formed by anodic etching in dilute hydrofluoric acid 150. A thin coating of a Raman active metal, such as gold or silver, may be coated onto the porous silicon 110, 210 by cathodic electromigration or any known technique. The metal-coated substrate 240, 340 provides an extensive, metal rich environment for SERS, SERRS, hyper-Raman and/or CARS Raman spectroscopy. In certain embodiments of the invention, metal nanoparticles may be added to the metal-coated substrate 240, 340 to further enhance the Raman signals. Raman spectroscopy may be used to detect, identify and/or quantify a wide variety of analytes, using the disclosed methods and apparatus 300.

Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (sers) substrate

This invention uses large surface to volume ratio materials for separation, release layer, and sacrificial material applications. The invention outlines the material concept, application designs, and fabrication methodologies. The invention is demonstrated using deposited column/void network materials as examples of large surface to volume ratio materials. In a number of the specific applications discussed, it is shown that it is advantageous to create structures on a laminate on a mother substrate and then, using the separation layer material approach, to separate this laminate from the mother substrate using the present separation scheme. It is also shown that the present materials have excellent release layer utility. In a number of applications it is also shown how the approach can be used to uniquely form cavities, channels, air-gaps, and related structures in or on various substrates. Further, it is demonstrated that it also can be possible and advantageous to combine the schemes for cavity formation with the scheme for laminate separation.

Deposited thin films and their use in separation and sarcrificial layer applications

The present invention is directed to the use of deposited thin films for chemical or biological analysis. The invention further relates to the use of these thin films in separation adherence and detection of chemical of biological samples. Applications of these thin films include desorption-ionization mass spectroscopy, electrical contacts for organic thin films and molecules, optical coupling of light energy for analysis, biological materials manipulation, chromatographic separation, head space adsorbance media, media for atomic molecular adsorbance or attachment, and substrates for cell attachment.

Deposited thin films and their use in detection, attachment, and bio-medical applications

Amorphous and polycrystalline silicon (poly-Si) films, deposited by an electron cyclotron resonance plasma-enhanced chemical vapor deposition system at 120 °C, have been investigated. All films have been grown with either hydrogen or argon dilution. Using the films with the hydrogen dilution, the effect of rf (13.56 MHz) substrate bias has also been studied. Analysis with x-ray diffraction shows that films grown with Ar dilution and no rf bias do not show any crystallinity while the corresponding films deposited with H2 dilution and no rf bias contain a significant amount of the crystalline phase. With only a 3:1 H2 to silane ratio, highly crystallized films can be grown at 120 °C. In the presence of rf (13.56 MHz) substrate bias, there is a decrease of crystallinity in films. It has been found from cross-sectional transmission electron microscopy that films deposited without rf bias develop a very uniform columnar structure whereas films made with rf bias develop a closely packed, continuous but more amo...

Characteristics of amorphous and polycrystalline silicon films deposited at 120 °C by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Silicon nitride (SiNx:H) thin film deposited at 50°C using an electron cyclotron resonance plasma-enhanced chemical deposition (ECR PECVD) system has been explored. This 50°C silicon nitride deposited on a 150 mm diameter Si wafer shows an acceptable uniformity; ±0.9% of average index of refraction and ±6.5% of average thickness are maintained across 150 mm diameter of the Si wafer. As-deposited 50°C silicon nitrides have a leakage current density value of 2–3×10−9 A/cm2 at electric fields of 2 MV/cm and a breakdown electric field (i.e., field at a current density of 1×10−6 A/cm2) greater than 6 MV/cm. X-ray photoelectron spectroscopy (XPS) analysis displays that chemical bonding structure of this low-temperature ECR silicon nitride is very comparable to that of 250°C PECVD nitride. However, IR absorption data indicate that the low-temperature ECR nitride has more Si–H bonds and fewer N–H bonds than the high-temperature PECVD nitride. These ECR films manifest resistance to buffered oxide etchant (BOE) attack with the etch rates that are slower than 50% of a 250°C PECVD nitride. The lower concentration of N–H bonds may enable these low-temperature nitrides to resist BOE attack.

Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma

High porosity nanocrystalline Si thin films have been deposited using a high density plasma approach at temperatures as low as 100 °C. These films exhibit the same unique properties, such as visible luminescence and gas sensitivity, that are seen in electrochemically etched Si (i.e., porous Si). The nanostructure consists of an array of rodlike columns normal to the substrate surface situated in a void matrix. We have demonstrated that this structure is fully controllable and have varied the porosity up to ∼90% (as derived from optical reflectance) by varying the deposition conditions. In particular, the impact of plasma power has been found to reduce porosity by increasing the nuclei density and therefore the areal density of columns. Humidity sensors have been demonstrated based on the enhanced conductivity of our films (up to 6 orders of magnitude) in response to increase in relative humidity. Depending on the porosity, the conductivity-relative humidity behavior of our films shows variations which can...

Sanghoon Bae

Papers

Deposited thin films and their use in separation and sarcrificial layer applications

Deposited thin films and their use in detection, attachment, and bio-medical applications

Characteristics of amorphous and polycrystalline silicon films deposited at 120 °C by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma

Nanocrystalline Si thin films with arrayed void-column network deposited by high density plasma