A positive resist composition comprising: at least one compound selected from a compound capable of generating an acid represented by the formula (I) as defined herein upon irradiation with actinic rays or radiation and a compound capable of generating an acid represented by the following formula (II) upon irradiation with actinic rays or radiation; and a compound capable of generating an acid represented by the formula (III) as defined herein upon irradiation with actinic rays or radiation.

Positive resist composition and pattern-forming method using the same

A radiation sensitive resin composition comprising (A) a fluorine-containing copolymer of hexafluoropropylene, at least one compound selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides, and an unsaturated compound (B) an acid generating compound which generates an acid upon exposure to radiation; (C) a cross-linkable compound; and (D) an organic solvent. The composition suitable is useful for a negative resist for forming a mask for the production of a circuit such as a semiconductor integrated circuit or a thin film transistor circuit for liquid crystal displays as well as a material for forming a permanent film such as an interlaminar insulating film or a color filter protective film.

Radiation-sensitive resin composition

A positive photosensitive composition comprises a compound capable of generating a specified sulfonic acid upon irradiation with one of an actinic ray and radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer.

Positive photosensitive composition

A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects.

Polymer, resist composition and patterning process

Provided is a positive photoresist composition for use in the production of a semiconductor device, which ensures high resolution, reduced edge roughness of a line pattern and a small number of development defects. The positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an alkali developer increases under the action of an acid.

Positive photoresist composition

PROBLEM TO BE SOLVED: To provide a chemical amplification positive type resist material for electronic beam or soft x-ray exposure which is a chemical amplification positive type resist material containing one or more kinds of an alkali-insoluble or an slightly alkali-soluble resins introducing an acid-labile group to a part of hydrogen atoms of carboxyl groups or phenol hydroxyl groups of a base polymer soluble in an alkaline solution containing a carboxyl group or a phenol hydroxyl group and which is characterized in that the above resin contains at least two kinds of acid-labile groups, one being an acetal group or a ketal group and the other being a tertiary hydrocarbon group or a substituent containing a tertiary hydrocarbon group. SOLUTION: The resist material of the present invention is excellent in stability when left in vacuum after exposure with electronic beams and is low in trailing on a Cr substrate and is excellent in sensitivity, degree of resolution and plasma etching resistance. Thus, the resist material of the present invention is especially suitable for a material for forming a minute pattern in machining of a mask substrate by these characteristics.

Chemical amplification positive type resist material

PROBLEM TO BE SOLVED: To provide a material for forming a lower layer film, in particular a lower layer film for a two- or three-layer resist process, the material comprising a novolac resin having a fluorene or tetrahydrospiro biindene structure as a base and having higher etching durability than polyhydroxystyrene or cresol novolac resin, and also to provide a method for forming a pattern by using the material. SOLUTION: The material for forming a lower layer film is prepared by adding a novolac resin having a fluorene or tetrahydrospiro biindene structure. The material for forming a lower layer film has sufficient absorbance to develop a sufficient antireflection effect in ≥200 nm film thickness by combining with an intermediate layer having an antireflection effect if necessary. The etching rate of the material by CF 4 /CHF 3 gas and Cl 2 /BCl 3 gas used for processing a substrate is lower than in a normal m-cresol novolac resin, which means high etching durability. A favorable resist figure after patterning is obtained. COPYRIGHT: (C)2005,JPO&NCIPI

Material for forming photoresist lower layer film and method for forming pattern

A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.

Chemically amplified negative resist composition and patterning process

PROBLEM TO BE SOLVED: To provide a resist material that exhibits a high resolution and is effective in minimizing defects in photolithography using a high-energy line such as ArF excimer laser light as a light source, and a patterning process using the resist material. SOLUTION: The positive resist material comprises a resin component (A) having a solubility in an alkaline developer that increases under the action of an acid, a compound (B) capable of generating an acid in response to an actinic ray or radiation, and one or more acidic organic compounds (C) of ≥150 mol.wt. The resist material exhibits a high resolution and is effective in minimizing defects in micropatterning technique, particularly ArF lithographic technique. The material is thus quite effective for precise micropatterning. COPYRIGHT: (C)2008,JPO&INPIT

Resist material and patterning process

A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed.

Satoshi Watanabe

Papers

Chemical amplification positive type resist material

Material for forming photoresist lower layer film and method for forming pattern

Chemically amplified negative resist composition and patterning process

Resist material and patterning process

Negative resist composition and patterning process