An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A positive resist composition comprising: at least one compound selected from a compound capable of generating an acid represented by the formula (I) as defined herein upon irradiation with actinic rays or radiation and a compound capable of generating an acid represented by the following formula (II) upon irradiation with actinic rays or radiation; and a compound capable of generating an acid represented by the formula (III) as defined herein upon irradiation with actinic rays or radiation.

Positive resist composition and pattern-forming method using the same

An ophthalmic lens suited for extended-wear periods of at least one day on the eye without a clinically significant amount of corneal swelling and without substantial wearer discomfort. The lens has a balance of oxygen permeability and ion or water permeability, with the ion or water permeability being sufficient to provide good on-eye movement, such that a good tear exchange occurs between the lens and the eye. A preferred lens is a copolymerization product of a oxyperm macromer and an ionoperm monomer. The invention encompasses extended wear contact lenses, which include a core having oxygen transmission and ion transmission pathways extending from the inner surface to the outer surface.

Extended Wear Ophthalmic Lens

A radiation sensitive resin composition comprising (A) a fluorine-containing copolymer of hexafluoropropylene, at least one compound selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides, and an unsaturated compound (B) an acid generating compound which generates an acid upon exposure to radiation; (C) a cross-linkable compound; and (D) an organic solvent. The composition suitable is useful for a negative resist for forming a mask for the production of a circuit such as a semiconductor integrated circuit or a thin film transistor circuit for liquid crystal displays as well as a material for forming a permanent film such as an interlaminar insulating film or a color filter protective film.

Radiation-sensitive resin composition

A positive photosensitive composition comprises a compound capable of generating a specified sulfonic acid upon irradiation with one of an actinic ray and radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer.

Positive photosensitive composition

A chemically amplified positive resist composition contains as a base a carboxyl or phenolic hydroxyl group-containing resin soluble in aqueous alkaline solution, in which acid labile groups are incorporated into at least some of the hydrogen atoms on the carboxyl or phenolic hydroxyl groups so that the resin becomes insoluble or substantially insoluble in alkali, wherein the resin contains acid labile groups of at least two types, acid labile groups of one type are acetal or ketal groups, and acid labile groups of the other type are tertiary hydrocarbon groups or tertiary hydrocarbon group-containing substituents. The resist composition remains stable during vacuum standing after exposure to electron beams or soft x-rays, leaves minimal footings on chromium substrates, has an excellent sensitivity and resolution, and is thus suited as a micropatterning material for use in the processing of mask substrates.

Chemically amplified positive resist composition

Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

Double patterning process

PROBLEM TO BE SOLVED: To provide a resist material that exhibits a high resolution and is effective in minimizing defects in photolithography using a high-energy line such as ArF excimer laser light as a light source, and a patterning process using the resist material. SOLUTION: The positive resist material comprises a resin component (A) having a solubility in an alkaline developer that increases under the action of an acid, a compound (B) capable of generating an acid in response to an actinic ray or radiation, and one or more acidic organic compounds (C) of ≥150 mol.wt. The resist material exhibits a high resolution and is effective in minimizing defects in micropatterning technique, particularly ArF lithographic technique. The material is thus quite effective for precise micropatterning. COPYRIGHT: (C)2008,JPO&INPIT

Resist material and patterning process

A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.

Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group

The invention provides a high molecular weight silicone compound comprising recurring units of formula (1) and having a weight average molecular weight of 1,000-50,000. Some or all of the hydrogen atoms of carboxyl groups or carboxyl and hydroxyl groups in the silicone compound may be replaced by acid labile groups. Z is di- to hexavalent, non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; Z′ is a di- to hexavalent, normal or branched hydrocarbon group or non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; x, y and z are integers of 1-5 corresponding to the valence of Z and Z′; R 1 is —OCHR—R′ —OH or —NHCHR—R′ —OH; R 2 is alkyl or alkenyl or a monovalent, non-aromatic, polycyclic hydrocarbon or bridged cyclic hydrocarbon group; p1, p2, p3 and p4 are 0 or positive numbers. A resist composition comprising the high molecular weight silicone compound as a base resin is sensitive to actinic radiation and has a high sensitivity and resolution so that it is suitable for microfabrication with electron beams or deep UV. Since the composition has low absorption at the exposure wavelength of an ArF or KrF excimer laser, a finely defined pattern having walls perpendicular to the substrate can be readily formed.

Toshinobu Ishihara

Papers

Chemically amplified positive resist composition

Double patterning process

Resist material and patterning process

Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group

High molecular weight silicone compounds resist compositions, and patterning method