4.1. Nanomachining with Scanning Probes 1831 4.2. Soft Lithography 1832 4.3. Embossing with Rigid Masters 1835 4.4. Near-Field Phase-Shifting Photolithography 1835 4.5. Topographically Directed Photolithography 1837 4.6. Topographically Directed Etching 1837 4.7. Lithography with Neutral Metastable Atoms 1838 4.8. Approaches to Size Reduction 1839 5. Techniques for Making Regular or Simple Patterns 1839

https://www.engr.colostate.edu/ECE581/fall07/xia%20chem%20rev%2099.pdf

Unconventional Methods for Fabricating and Patterning Nanostructures.

The interaction of polymers with their environment depends largely on the functional groups they carry. Interfaces between different polymers or between polymers and other surfaces can be strengthened through the design of molecular interactions such as hydrogen bonding and through the control of polymer architecture. The placement of functional groups at polymer chain ends or in well-defined segments can determine the ultimate properties. Three-dimensional synthetic polymers such as dendrimers can be fashioned to encapsulate reactive sites or provide highly controlled surfaces and interfaces.

http://science.sciencemag.org/content/sci/263/5154/1710.full.pdf

Functional polymers and dendrimers: reactivity, molecular architecture, and interfacial energy

Polymer surface modification by plasmas and photons

Lithography is a field in which advances proceed at a swift pace. This book was written to address several needs, and the revisions for the second edition were made with those original objectives in mind. Many new topics have been included in this text commensurate with the progress that has taken place during the past few years, and several subjects are discussed in more detail. This book is intended to serve as an introduction to the science of microlithography for people who are unfamiliar with the subject. Topics directly related to the tools used to manufacture integrated circuits are addressed in depth, including such topics as overlay, the stages of exposure, tools, and light sources. This text also contains numerous references for students who want to investigate particular topics in more detail, and they provide the experienced lithographer with lists of references by topic as well. It is expected that the reader of this book will have a foundation in basic physics and chemistry. No topics will require knowledge of mathematics beyond elementary calculus.

Principles of Lithography

hydrogen from thiol, and as a result reinitiation occurs by a thiyl radical. While the thiol−ene reaction in Scheme 14 implies the formation of linear polymer from difunctional enes and difunctional thiols, the situation is in reality much more complicated with reactive vinyls such as acrylates. In such cases, both thiol−ene step growth and acrylate chain growth polymerization occur simultaneously, resulting in a difficultto-predict molecular architecture. Cramer and Bowman photocured resins with stoichiometric amounts of acrylate and thiol moieties and found acrylate conversion to be roughly twice that of thiol. This means that the kinetic rate constant of acrylate propagation is approximately 1.5 times that of thiol hydrogen abstraction. In the presence of air, reaction with thiol becomes preferential. Addition of multifunctional alkylthiols to diacrylates markedly improves final DBC. Degree of functionality was shown to have an effect both on cure time and on the modulus of the formed film. Higher functionality thiols are preferred since they increase reaction viscosity more quickly and hence slow diffusion of atmospheric oxygen. The gel point in thiol−ene polymerization, in both air and nitrogen, is greatly delayed relative to neat acrylate polymerization. While thiols tend to retard the rate of polymerization with both acrylates and methacrylates, the rate is increased in the case of vinyl esters and vinyl carbonates. In spite of the promise that thiols offer, odor (volatile thiols born from ester hydrolysis) and storage stability are two major obstacles to their widespread use. This second problem arises from the thermally induced addition to acrylates. Stabilization of thiol−ene formulations is addressed in multiple patents. In addition to small-molecule alkylthiols such as hexanedithiol (HDT) or pentaerythritol tetrakis-3-mercaptopropionate (TT), nonvolatile polymeric thiols such as homoand copolymers of mercaptopropylmethylsiloxane (MMSiO) have been investigated (Figure 7). Aromatic thiols have also been studied in photopolymerization due to their excellent hydrogen-donation capacity and better storage stability (Figure 7). Aromatic thiols have been used with type I photoinitiators and in place of amines with type II sensitizers. In the first case, addition of 0.1 wt % mercaptobenzoxazole (MBO) enhanced cure rate and mechanical properties of the film, while higher concentrations of thiol reduced cure rate. Since polymerizations were performed between KCl plates, the enhanced rate is explained by hydrogen transfer to early-stage peroxyl radicals formed with predissolved oxygen, while further hydrogen transfer retards propagating alkyl radicals. Type II triplet quenching of aryl thiols was found to be dependent on the sensitizer, viscosity, and hydrogen-donating capability of the monomer and on the presence of oxygen. With Scheme 13. Solvolysis of Acylphosphine Oxide in the Presence of an Amine Scheme 14. Main Reactions in Thiol−ene Copolymerization Figure 7. Commonly used thiols for reduced oxygen inhibition. Chemical Reviews Review dx.doi.org/10.1021/cr3005197 | Chem. Rev. XXXX, XXX, XXX−XXX O CQ as sensitizer, MBO and analogous mercaptobenzamidazole (MBI) allowed methacrylate polymerization rates in air comparable to those obtained with the commonly used amine DMAB. The polymerization rate achieved with mercaptobenzothiazole (MBT) was lower but could be increased by introduction of an electron-withdrawing nitro moiety to the aromatic ring. The thiazol dimer DBT increased polymerization rate in argon but not in air. MBO, MBI, and MBT were also tested in combination with ITX, where they were found to be effective in argon but inferior to DMAB in air. Poor reactivity with ITX is explained by the π, π* character of its lowest-lying triplet state, which purportedly abstracts hydrogen atoms less efficiently than the n, π* triplet of CQ. 3.4.3. Silanes. Organosilanes can play a number of different roles in radical polymerizations. On one hand, polysilanes with photocleavable Si−Si bonds can be utilized as photoinitiators, and on the other hand, silanes with Si−H bonds may be used as secondary additives to serve as hydrogen donors. In either case, a silane radical is formed that has very high reactivity toward molecular oxygen (kox ≈ 3 × 10 L·mol−1·s−1) to give a silylperoxyl radical (SiOO•). This silylperoxyl radical may rearrange to provide a new silyl radical that may then react with monomer or additional oxygen (Scheme 15). Polysilanes undergo efficient photocleavage to provide silane radicals and are reported to be less sensitive to oxygen inhibition. However, the efficiency of these macroradicals to initiate acrylate polymerization was found to be generally low. Small-molecule disilanes with pendant aromatic moieties to red-shift absorbance were synthesized by Laleveé et al. and found to have much better reactivity toward MMA. As expected, steric effects at the silane play an important role in initiation kinetics. Silanes with Si−H bonds may be utilized in type II systems and can even provide better results than amines, particularly when cured in air. Polysilanes with latent Si−H bonds along the backbone have also been investigated. These compounds can function in either of the above-mentioned roles and were shown to work very well as replacements for amines in visible light curing systems with CQ. A possible disadvantage of silanes is their sensitivity toward hydrolysis. 3.4.4. Other Hydrogen Donors. In addition to amines, thiols, and silanes, a number of hydrogen donors based on other elements have been tested as type II co-initiators and as peroxyl radical scavengers. While not the only parameter, bond dissociation energy (BDE) of the donor−H bond is a very useful metric for gauging the ability of a reagent to function as a hydrogen donor. Triphenyl derivatives of group 14 elements silicon, germanium and tin were tested for their ability to quench the excited state of benzophenone and for hydrogen donation to peroxyl radicals (Table 3). The quenching rate is highest for stannane, which is to be expected from the dissociation energy. Similar to thiols, hydrogen donors based on other chalcogens (selenium and tellurium) have been investigated in radical photopolymerization. Arylselenols are highly reactive hydrogen donors but tend to be avoided as they are also reactive vesicants. Organic derivatives of tellurium may be photodecomposed to provide initiating radicals; however, oxygen stability is limited. Thiols and selenols can both oxidize to provide dimers with photolabile S−S or Se−Se bonds. Although such compounds can be used as initiators, the ability to counter oxygen inhibition is compromised. While low-oxidation-state compounds such as phosphane tend not be appropriately stable, phosphites with a P−H bond have also been studied for oxygen inhibition. Schmitt et al. used didecylphenyl phosphite to reduce the photopolymerization time of methacrylates in open air. This phosphite may react directly with oxygen to form a phosphate or alternatively donate hydrogen to an alkylperoxyl radical. The phosphite radical formed from this latter reaction can be oxidized by a second peroxyl radical to provide a stable phosphate radical and an alkoxyl radical, which may reinitiate polymerization (Scheme 16). A variety of borane and metal hydride hydrogen donors that undergo similar reactions will be discussed in the next section. 3.5. Other Reducing Agents While hydrogen donors may also be classified as reducing agents, the term is used here to refer specifically to additives that react with either alkylperoxyl radicals or molecular oxygen by a reduction that does not involve hydrogen. The two most important classes of additives that serve this role are organic molecules based on either boron or phosphorus, where the oxidation state of boron or phosphorus is raised during the course of the reaction. A number of metallic-based additives are suggested for use as peroxyl radical reducing agents. One example is provided by Courtecuisse et al., demonstrating the use of zirconium complex Zr(TEA)4 to combat oxygen inhibition (Figure 8). Purportedly zirconium is oxidized by peroxyl radicals releasing an amine ligand as an initiating radical. Hydrolytic stability of the zirconium complex may, however, be a concern. 3.5.1. Boranes. Organoboranes are an interesting class of radical initiators that have also found some application in photocuring. An interesting feature of borane radical initiators is that most actually require oxygen as a co-initiator. While this may at first sound like a simple solution to avoid oxygen inhibition, the problem in this case is that formulations are not stable and react prematurely. The mechanisms given by Bhanu and Kishore for oxidation of alkylborane gives a number of radicals that can potentially initiate polymerization (Scheme 17). Although this scheme presents the reaction with a trialkylborane, the same radical interchange reaction has been observed with boronic esters, where Ingold measured a rate constant of 4.8 × 10 L·mol−1·s−1. Scheme 15. Reaction of Silyl Radical with Oxygen Table 3. Bond Dissociation Energy of Group 14 Triaryl Hydrides and Rate Constant for Hydrogen Donation to Benzophenone and tert-Butylperoxyl Radical hydrogen donor BDE (kcal·mol−1) kH→BP × 10 7 (L·mol−1·s−1) kH→tBuOO (L·mol−1·s−1)

Strategies to Reduce Oxygen Inhibition in Photoinduced Polymerization

Chemical Amplification in High-Resolution Imaging Systems

We have found that the performance of the t-BOC/onium salt resist system is severely degraded by vapor from organic bases. This effect is very pronounced and can be observed when the coated wafers stand for 15 minutes in air containing as little as 15 parts per billion (ppb) of an organic base. The observed effect, caused by this chemical contamination, depends on the tone of the resist system. For negative tone systems the UV exposure dose, required to obtain the correct linewidth, increases. While for the positive tone system, one observes the generation of a skin at the resist-air interface. Both effects are caused by the photogenerated acid being neutralized by the airborne organic base. There are a wide variety of commonly used materials which can liberate trace amounts of volatile amines and degrade resist performance. For example, fresh paint on a laboratory wall can exhibit this detrimental effect. These effects can be minimized by storing and processing the resist coated wafers in air that has passed through a specially designed, high efficiency carbon filter. The implementation of localized air filtration, to bathe the resist in chemically pure air, enabled this resist system to operate in a manufacturing environment at a rate of 100 wafers/hour.

Airborne chemical contamination of a chemically amplified resist

A negative tone resist image is achieved by (1) coating a substrate with a film of a polymer containing a masked, reactive functionality; (2) imagewise exposing the film to radiation in a fashion such that the masked functionality is liberated; (3) contacting the film with an organometallic reagent; (4) developing the relief image by the oxygen plasma etching.

Radiation sensitive and oxygen plasma developable resist

A positive tone photoresist is obtained without a solvent development step. The resist is a polymer containing masked reactive functionality which is imagewise exposed to unmask the functionality then treated with a non-organometallic reagent to remask that functionality. Following flood exposure, the resist is treated with an organometallic reagent containing an element which forms a non-volatile oxide. It is then developed by means of oxygen reactive ion etching.

Positive tone oxygen plasma developable photoresist

A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained. The etch-resistant patterned layer (18) is obtained by reacting a patterned polymeric film (14) containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers (12) using an oxygen plasma or equivalent dry-etch method.

Scott A. MacDonald

Papers

Chemical Amplification in High-Resolution Imaging Systems

Airborne chemical contamination of a chemically amplified resist

Radiation sensitive and oxygen plasma developable resist

Positive tone oxygen plasma developable photoresist

Method of creating patterned multilayer films for use in the production of semiconductor circuits and systems