S
Scott J. Deboer
Researcher at Micron Technology
Publications - 64
Citations - 1476
Scott J. Deboer is an academic researcher from Micron Technology. The author has contributed to research in topics: Layer (electronics) & Silicon nitride. The author has an hindex of 23, co-authored 64 publications receiving 1475 citations.
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Patent
Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby
TL;DR: In this paper, a method of forming a high dielectric oxide film conventionally formed using a post formation oxygen anneal to reduce the leakage current of such film is described.
Patent
Methods of forming carbon-containing layers
TL;DR: In this paper, an etch-stop layer over the wordline of a substrate is constructed, and an opening is formed through the etch stop layer to form an opening through the insulative layer.
Patent
Semiconductor structure having a doped conductive layer
TL;DR: In this paper, a combination of a silicon diffusion barrier layer, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer was proposed for word line stacks.
Patent
Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
TL;DR: The inventive process as mentioned in this paper allows for the formation of aluminum nitride or titanium aluminium nitride over the surface of a plurality of wafers simultaneously, and subsequent anneal of the aluminum oxide layer or the titanium oxide layer can be performed in situ.
Patent
Conductor layer nitridation
TL;DR: In this paper, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer and a conductor layer for word line stacks, and the diffusion barrier is formed by annealing a silicon oxide film in a nitrogen-containing ambient.