An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A microelectronic package includes a microelectronic element having faces and contacts, the microelectronic element having an outer perimeter, and a substrate overlying and spaced from a first face of the microelectronic element, whereby an outer region of the substrate extends beyond the outer perimeter of the microelectronic element. The microelectronic package includes a plurality of etched conductive posts exposed at a surface of the substrate and being electrically interconnected with the microelectronic element, whereby at least one of the etched conductive posts is disposed in the outer region of the substrate. The package includes an encapsulating mold material in contact with the microelectronic element and overlying the outer region of the substrate, the encapsulating mold material extending outside of the etched conductive posts for defining an outermost edge of the microelectronic package.

Microelectronic packages and methods therefor

There is provided a semiconductor package and method for fabricating the same. An embodiment of the semiconductor package includes: a semiconductor chip having a first face and a second face, the first face having a plurality of input/output pads formed thereon; a circuit board composed of a resin film having a first face and a second face, a circuit pattern layer including a plurality of bond fingers and ball lands, and a cover coat covering the circuit pattern layer and selectively exposing the plurality of bond fingers and ball lands, the circuit pattern layer being formed on the first face of the resin film, the circuit board having a through hole at the center thereof, the semiconductor chip being placed in the through hole; electrical connection means for electrically connecting the input/output pads of the semiconductor chip to the bond fingers of the circuit board; an encapsulant for encapsulating the semiconductor chip, connection means and a part of the circuit board; and a plurality of conductive balls fused to the circuit board. Accordingly, the semiconductor package becomes very thin and its heat spreading performance is improved.

Semiconductor package and method for fabricating the same

Packages for an integrated circuit die and methods and leadframes for making such packages are disclosed. The package includes a die, a die pad, peripheral metal contacts, bond wires, and an encapsulant. The die pad and contacts are located at a lower surface of the package. The die pad and the contacts have side surfaces which include reentrant portions and asperities to engage the encapsulant. A method of making a package includes providing a metal leadframe having a die pad in a rectangular frame. Tabs extend from the frame toward the die pad. The die pad and tabs have side surfaces with reentrant portions and asperities. A die is attached to the die pad. The die is electrically connected to the tabs. An encapsulant is applied to the upper and side surfaces of the leadframe. Finally, the leadframe is cut in situ so that the die pad and tabs are severed from the frame, the sides of the package are formed, and the package is severed from the leadframe.

Plastic integrated circuit package and method and leadframe for making the package

Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.

Methods and apparatus of stacking DRAMs

Micro lead frame (MLF)-type semiconductor packages that allow the semiconductor packages to be stacked on top of each other. One aspect of the semiconductor package includes a leadframe, a plurality of electrical connectors, a semiconductor chip, and a sealing material for encapsulating the above components. The leadframe has a plurality of leads, with each one of the plurality of leads running from the top of the semiconductor package to the bottom of the semiconductor package. Each one of the plurality of leads has a top portion protruding from the top surface of the semiconductor package and a bottom portion protruding from the bottom surface of the semiconductor package. The leads allow for electrical connection of a second semiconductor package placed on top of the first semiconductor package. Further, the protruding parts of the leads form a space between the stacked semiconductor packages for improved heat dissipation.

Stackable semiconductor package and method for manufacturing same

The present invention includes a package for housing an integrated circuit device. The present invention also includes leadframes and methods for making such packages. The package includes an integrated circuit device on a metal die pad. A metal ring is between the die pad and leads and surrounds the die pad. The ring is connected to the die pad by a nonconductive tape. Encapsulant material covers the entire structure. The ring is connected to a lead identified for connection to an external power voltage supply. The ring in turn is connected to a power voltage input pad on the integrated circuit device. The die pad floats, or is connected to a lead that is connected to an external ground voltage. The package is made from a leadframe that has a die pad, a metal ring between the die pad and radiating leads, and a nonconductive tape that connects the ring to the die pad. In one embodiment, the leadframe and package also include a bypass or decoupling capacitor attached between the die pad and the ring.

Electronic device package and leadframe and method for making the package

A thin, small-outline semiconductor package, and a thermally enhanced leadframe for use in it, comprise a plurality of electrically conductive leads held together in a spaced, planar relationship about a central opening defined by the leads, and a thick, plate-like heat sink made of an electrically and thermally conductive metal attached to the leads such that it is centered within the opening and parallel to the plane of the leads. The heat sink has a lower surface exposed through the outer surface of a molded resin envelope encapsulating the package for the efficient dissipation of heat therefrom, and an upper surface having a recess formed into it. The recess has a planar floor with a semiconductor die attached to it, and defines a grounding ring around the periphery of the upper surface of the heat sink immediately adjacent to the edges of the die for the down-bonding of grounding wires from the die and the leads. The package provides enhanced heat dissipating capabilities, an improved resistance to long-term penetration by moisture, and a down-bonding region that substantially shortens the length of grounding wires down-bonded thereto and substantially reduces the residual shear stress acting on the down-bonds.

Thin leadframe-type semiconductor package having heat sink with recess and exposed surface

A package for one or more semiconductor die is disclosed, along with a method of making the package. In one embodiment, the package includes a substrate having opposed top and bottom surfaces and an aperture therebetween. The substrate includes an insulative layer and top and bottom metal layers on the insulative layer around the aperture. The metal layers are electrically connected through the insulative layer. At least one die is supported within the aperture by an insulative encapsulant material. The bottom surface of the die is exposed. In alternative embodiments, a stack including a plurality of die (e.g., two die) are supported in the aperture. Rectangular metal are provided in a single row on the bottom surface of the substrate along at least two edges of the package.

Low profile package for plural semiconductor dies

In the manufacture of semiconductor packages having molded plastic bodies, the plating of all of the surfaces of the molding tool that comes into contact with the molten resin during molding with a nodular thin dense chromium (“NTDC”) coating prevents the surfaces from adhering to the package body and ensures good package release, without formation of cracks or craters in the package body. This, in turn, permits the amount of both release agents and adhesion promoters used in the molding compound to be substantially reduced, or eliminated altogether, thereby resulting in a package body having improved strength and adhesion with the components of the package, and hence, an improved resistance of the package body to the propagation of cracks and its subsequent penetration by moisture.

Sean T. Crowley

Papers

Stackable semiconductor package and method for manufacturing same

Electronic device package and leadframe and method for making the package

Thin leadframe-type semiconductor package having heat sink with recess and exposed surface

Low profile package for plural semiconductor dies

Method of molding plastic semiconductor packages