An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Packages for an integrated circuit die and methods and leadframes for making such packages are disclosed. The package includes a die, a die pad, peripheral metal contacts, bond wires, and an encapsulant. The die pad and contacts are located at a lower surface of the package. The die pad and the contacts have side surfaces which include reentrant portions and asperities to engage the encapsulant. A method of making a package includes providing a metal leadframe having a die pad in a rectangular frame. Tabs extend from the frame toward the die pad. The die pad and tabs have side surfaces with reentrant portions and asperities. A die is attached to the die pad. The die is electrically connected to the tabs. An encapsulant is applied to the upper and side surfaces of the leadframe. Finally, the leadframe is cut in situ so that the die pad and tabs are severed from the frame, the sides of the package are formed, and the package is severed from the leadframe.

Plastic integrated circuit package and method and leadframe for making the package

The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Organic Light Emitting Display Device

The present invention comprises a semiconductor package comprising a bottom semiconductor package substrate which is populated with one or more electronic components. The electronic component(s) of the bottom substrate are covered or encapsulated with a suitable mold compound which hardens into a package body of the semiconductor package. The package body is provided with one or more vias through the completion of laser drilling process, such via(s) providing access to one or more corresponding conductive contacts of the bottom substrate. These vias are either lined or partially filled with a conductive metal material. Subsequently, a top semiconductor package substrate (which may optionally be populated with one or more electronic components) is mounted to the package body and electrically connected to the conductive metal within the via(s) of the package body.

Thin stacked interposer package

Micro lead frame (MLF)-type semiconductor packages that allow the semiconductor packages to be stacked on top of each other. One aspect of the semiconductor package includes a leadframe, a plurality of electrical connectors, a semiconductor chip, and a sealing material for encapsulating the above components. The leadframe has a plurality of leads, with each one of the plurality of leads running from the top of the semiconductor package to the bottom of the semiconductor package. Each one of the plurality of leads has a top portion protruding from the top surface of the semiconductor package and a bottom portion protruding from the bottom surface of the semiconductor package. The leads allow for electrical connection of a second semiconductor package placed on top of the first semiconductor package. Further, the protruding parts of the leads form a space between the stacked semiconductor packages for improved heat dissipation.

Stackable semiconductor package and method for manufacturing same

The present invention includes a package for housing an integrated circuit device. The present invention also includes leadframes and methods for making such packages. The package includes an integrated circuit device on a metal die pad. A metal ring is between the die pad and leads and surrounds the die pad. The ring is connected to the die pad by a nonconductive tape. Encapsulant material covers the entire structure. The ring is connected to a lead identified for connection to an external power voltage supply. The ring in turn is connected to a power voltage input pad on the integrated circuit device. The die pad floats, or is connected to a lead that is connected to an external ground voltage. The package is made from a leadframe that has a die pad, a metal ring between the die pad and radiating leads, and a nonconductive tape that connects the ring to the die pad. In one embodiment, the leadframe and package also include a bypass or decoupling capacitor attached between the die pad and the ring.

Electronic device package and leadframe and method for making the package

A lead frame for a semiconductor package including a rectangular lead frame body having a central opening, a plurality of leads arranged at and along each of two or four facing sides of the lead frame body, the leads extending in flush with the lead frame body, and a semiconductor chip mounting plate positioned on a plane not flush with a plane, where the leads are positioned, the semiconductor chip mounting plate being supported by down-set tie bars and provided with at least one groove having a rectangular ring shape while serving to prevent a penetration of moisture and to provide an increased coupling strength for the semiconductor chip mounting plate, the semiconductor chip mounting plate also serving as a heat sink. A ground bridge bar having a rectangular ring shape is arranged between the semiconductor chip mounting plate and the leads and supported by another tie bars. By virtue of the bridge bar, the length of bonding wires is reduced, thereby eliminating the possibility of the bonding wires to be short-circuited. A lead frame having a double down-set structure is also provided. By virtue of the double down-set structure, it is possible to increase the size of the semiconductor chip mounting plate, thereby achieving an improvement in the heat discharge effect.

Lead frame used for the fabrication of semiconductor packages and semiconductor package fabricated using the same

The present invention includes a package for housing an integrated circuit device. The present invention also includes leadframes and methods for making such packages. In one embodiment, the package includes an integrated circuit device on a metal die pad. A metal ring is between the die pad and leads and surrounds the die pad. The ring is connected to the die pad by a nonconductive adhesive tape. Encapsulant material covers the entire structure, except for portions of the leads. The ring is electrically connected to a lead identified for connection to an external power voltage supply. The ring in turn is electrically connected to a power voltage input pad on the integrated circuit device. The potential of the die pad may float, or the die pad may be electrically connected through a lead to an external ground voltage. The package is made from a leadframe that has a die pad, a metal ring between the die pad and radiating leads, and a nonconductive adhesive tape that connects the ring to the die pad. A bypass capacitor may be electrically connected between the die pad and ring.

Electronic device package and leadframe

In accordance with the present invention, there is provided a semiconductor package (e.g., a QFP package) including a uniquely configured leadframe sized and configured to maximize the available number of exposed leads in the semiconductor package. More particularly, the semiconductor package includes a generally planar die pad or die paddle defining multiple peripheral edge segments. In addition, the semiconductor package includes a plurality of leads. Some of these leads include bottom surface portions which, in the completed semiconductor package, are exposed and at least partially circumvent the die pad, with other leads including portions which protrude from respective side surfaces of a package body in the completed semiconductor package. The semiconductor package also includes one or more power bars and/or one or more ground rings which are integral portions of the original leadframe used to fabricate the same.

Semiconductor device including leadframe having power bars and increased I/O

A semiconductor package which includes a generally planar die paddle defining multiple peripheral edge segments and a plurality of leads which are segregated into at least two concentric rows. Connected to the top surface of the die paddle is at least one semiconductor die which is electrically connected to at least some of the leads of each row. At least portions of the die paddle, the leads, and the semiconductor die are encapsulated by a package body, the bottom surfaces of the die paddle and the leads of at least one row thereof being exposed in a common exterior surface of the package body.

Yeon Ho Choi

Papers

Electronic device package and leadframe and method for making the package

Lead frame used for the fabrication of semiconductor packages and semiconductor package fabricated using the same

Electronic device package and leadframe

Semiconductor device including leadframe having power bars and increased I/O

Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package