Quantum Dot Heterostructures

Structural, morphological, electrical and dielectric properties of Mn doped CeO2

Handbook of thin film technology

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky–Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and high...

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode

Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors having identical breakdown voltages but with different field plate (FP) lengths. The results indicated that applying more positive ON-state gate biases resulted in pronounced recovery in the dynamic ON-resistance for the FP device, whereas no gate-bias effects were observed for the device without FP. The mechanism responsible for the reduced current collapse by FP is proposed, in which the key role is played during ON-state by the quick field-effect recovery of partial channel depletion caused by electron trapping at AlGaN surface states between gate and drain.

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.

Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes

Ni–Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

Microstructure and electrical characteristics of Ni Cr thin films

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

https://iopscience.iop.org/article/10.1088/1361-6641/ab11a0/pdf

Seema Vinayak

Papers

Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes

Ni–Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

Microstructure and electrical characteristics of Ni Cr thin films

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Cumulative dose γ-irradiation effects on material properties of AlGaN/GaN hetero-structures and electrical properties of HEMT devices