Disclosed is a light-emitting diode package, comprising: a package body having a cavity; a light-emitting diode chip having a plurality of light-emitting cells connected in serial with each other; a fluorescent body for converting the wavelength of light emitted by the light-emitting diode chip; and a pair of lead electrodes. The light-emitting cells are connected together in series between the pair of lead electrodes.

Light emitting diode package

This review highlights the use and great potential of liquid metals as exotic and powerful solvents (i.e. fluxes) for the synthesis of intermetallic phases. The results presented demonstrate that considerable advances in the discovery of novel and complex phases are achievable utilizing molten metals as solvents. A wide cross-section of examples of flux-grown intermetallic phases and related solids are discussed and a brief history of the origins of flux chemistry is given. The most commonly used metal fluxes are surveyed and where possible, the underlying principal reasons that make the flux reaction work are discussed.

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The metal flux: a preparative tool for the exploration of intermetallic compounds.

A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.

Nitride based transistors on semi-insulating silicon carbide substrates

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

Bulk GaN crystal growth by the high-pressure ammonothermal method

GaN single crystal growth using high-purity Na as a flux

A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.

Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device

A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.

Seiji Sarayama

Papers

GaN single crystal growth using high-purity Na as a flux

Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE

Growth of GaN single crystals from a Na-Ga melt at 750°C and 5 MPa of N2

Conditions for seeded growth of GaN crystals by the Na flux method