GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications

In this letter, we present the design of a V- band low-noise amplifier for intersatellite crosslink receivers. The test vehicle, realized on industrial metamorphic gallium arsenide technology, operates from 57 to 66 GHz exhibiting 23-dB gain and an average 1.8-dB noise figure. Particular attention was devoted to the analysis and synthesis of an alternative bias injection topology to obtain a sharp gain roll-off at lower frequencies, thus avoiding the insertion, at system level, of an image-reject filter.

V-Band GaAs Metamorphic Low-Noise Amplifier Design Technique for Sharp Gain Roll-Off at Lower Frequencies

This paper reports the development of a cryogenic wideband low-noise amplifier based on a 50-nm metamorphic high-electron-mobility transistor process on gallium arsenide substrates. The amplifier exhibits an average gain of 22.0 dB and a noise temperature of 49 K at an ambient temperature of 15 K in the frequency range 67–116 GHz. The minimum noise temperature of 34 K is reached at the frequency of 77.5 GHz.

Cryogenic 50-nm mHEMT MMIC LNA for 67–116 GHz with 34 K noise temperature

In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50–75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

Cryogenic MMIC low-noise amplifiers for V-band

Two monolithic microwave integrated circuit low noise amplifiers for 67-116 GHz have been developed using the 50 nm metamorphic high electron mobility transistor technology of Fraunhofer IAF. Both amplifiers have been measured on-wafer at room temperature and one of them additionally in a waveguide module at an ambient temperature of 18 K. The average gain and noise temperature in the band 75-110 GHz are 23 dB and 69 K, respectively, in the latter case.

Sener Turk

Papers

Cryogenic 50-nm mHEMT MMIC LNA for 67–116 GHz with 34 K noise temperature

Cryogenic low noise amplifier development for 67–116 GHz