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Seunghun Baek
Researcher at North Carolina State University
Publications - 13
Citations - 555
Seunghun Baek is an academic researcher from North Carolina State University. The author has contributed to research in topics: Isolation transformer & Distribution transformer. The author has an hindex of 8, co-authored 11 publications receiving 501 citations.
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Proceedings ArticleDOI
Design and development of Generation-I silicon based Solid State Transformer
Subhashish Bhattacharya,Tiefu Zhao,Gangyao Wang,Sumit Dutta,Seunghun Baek,Yu Du,Babak Parkhideh,Xiaohu Zhou,Alex Q. Huang +8 more
TL;DR: In this article, the Generation-I Solid State Transformer (SST) based on 6.5kV Si-IGBT is proposed for interface with 12kV distribution system voltage.
Proceedings ArticleDOI
High-voltage high-frequency transformer design for a 7.2kV to 120V/240V 20kVA solid state transformer
TL;DR: In this article, three cascaded 6.7kVA high-voltage high-frequency transformers operating at 3kHz are employed to convert voltage from 3800V high voltage DC link of each cascaded stage to 400V low voltage dc link.
Proceedings ArticleDOI
Design and hardware implementation of Gen-1 silicon based solid state transformer
Gangyao Wang,Seunghun Baek,Joseph Elliott,Arun Kadavelugu,Fei Wang,Xu She,Sumit Dutta,Yang Liu,Tiefu Zhao,Wenxi Yao,Richard D. Gould,Subhashish Bhattacharya,Alex Q. Huang +12 more
TL;DR: In this article, the design and hardware implementation and testing of 20kVA Gen-1 silicon based solid state transformer (SST), the high input voltage and high voltage isolation requirement are two major concerns for the SST design.
Proceedings ArticleDOI
Transformer less Intelligent Power Substation design with 15kV SiC IGBT for grid interconnection
Kamalesh Hatua,Sumit Dutta,Awneesh Tripathi,Seunghun Baek,Giti Karimi,Subhashish Bhattacharya +5 more
TL;DR: In this paper, the authors proposed a power topology for a solid state transformer (SST) with new 15kV SiC IGBT devices, where the targeted efficiency of the proposed SST is 98%.
Proceedings ArticleDOI
High-frequency design considerations of dual active bridge 1200 V SiC MOSFET DC-DC converter
Arun Kadavelugu,Seunghun Baek,Sumit Dutta,Subhashish Bhattacharya,Mrinal K. Das,Anant K. Agarwal,James D. Scofield +6 more
TL;DR: In this paper, a dual active bridge (DAB) converter has been built to validate the suitability of SiC devices for high power density converters, and the design details of the DAB hardware and the high frequency transformer used for interfacing both the bridges are given.