S
Shane Hollmer
Publications - 10
Citations - 578
Shane Hollmer is an academic researcher. The author has contributed to research in topics: Programmable metallization cell & Non-volatile memory. The author has an hindex of 8, co-authored 10 publications receiving 551 citations.
Papers
More filters
Journal ArticleDOI
Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process
Chakravarthy Gopalan,Y. Ma,T. Gallo,J. Wang,E. Runnion,Juan Saenz,Foroozan Sarah Koushan,Philippe Blanchard,Shane Hollmer +8 more
TL;DR: In this paper, the successful integration of CBRAM technology into an industry standard logic process is described and functional operation of such a fully CMOS integrated CBRAM memory array is shown.
Proceedings ArticleDOI
Demonstration of Conductive Bridging Random Access Memory (CBRAM) in Logic CMOS Process
Chakravarthy Gopalan,Yi Ma,Tony Gallo,Janet Wang,E. Runnion,Juan Saenz,Foroozan Sarah Koushan,Shane Hollmer +7 more
TL;DR: This paper has shown successful integration of CBRAM into Copper and Aluminum back end logic CMOS processes with minimal number of added masks.
Journal ArticleDOI
Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells
John R. Jameson,N. Gilbert,Foroozan Sarah Koushan,Juan Saenz,J. Wang,Shane Hollmer,Michael N. Kozicki,N. Derhacobian +7 more
TL;DR: Ag/GeS2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance G0 = 2e2/h.
Journal ArticleDOI
Power and Energy Perspectives of Nonvolatile Memory Technologies
TL;DR: This paper reviews the fundamental characteristics of current nonvolatile memory technologies as well as several promising emerging technologies from energy and power perspectives and specifically discusses the suitability of each one for use in ultralow-power and subthreshold CMOS applications.
Proceedings ArticleDOI
Conductive-bridge memory (CBRAM) with excellent high-temperature retention
John R. Jameson,Philippe Blanchard,C. Cheng,John Dinh,Antonio R. Gallo,V. Gopalakrishnan,Chakravarthy Gopalan,B. Guichet,S. Hsu,Deepak Kamalanathan,David Kim,Foroozan Sarah Koushan,Ming Sang Kwan,K. Law,Derric Lewis,Y. Ma,V. McCaffrey,Soo-Yong Park,Sarath Puthenthermadam,E. Runnion,John E. Sanchez,Jeffrey A. Shields,Kuei Chang Tsai,A. Tysdal,D. Wang,R. Williams,Michael N. Kozicki,Janet Wang,Venkatesh P. Gopinath,Shane Hollmer,M. Van Buskirk +30 more
TL;DR: In this article, a family of CBRAM cells that achieved excellent data retention at temperatures exceeding 200°C was presented. But their performance was limited by the physics of quantum point contacts, which is a critical barrier for the commercialization of emerging nonvolatile memories.