S
Shang Che Tsai
Researcher at National Chi Nan University
Publications - 5
Citations - 25
Shang Che Tsai is an academic researcher from National Chi Nan University. The author has contributed to research in topics: Energy-dispersive X-ray spectroscopy & Chemical binding. The author has an hindex of 2, co-authored 3 publications receiving 7 citations.
Papers
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Journal ArticleDOI
Organic/inorganic hybrid nanostructures of polycrystalline perylene diimide decorated ZnO nanorods highly enhanced dual sensing performance of UV light/CO gas sensors
Yu Sheng Tsai,Shang Che Tsai,Chih Chen Kuo,Wei Lun Chan,Wei Hsiang Lin,YewChung Sermon Wu,Yung-Sen Lin,Ming Hsien Li,Ming Yu Kuo,Hsiang Chen +9 more
TL;DR: In this paper, a polycrystalline perylene diimide (PDI) membrane was coated on ZnO nanorods (NRs), functioning as sensing nanocomposites.
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Morphological, Material, and Optical Properties of ZnO/ZnS/CNTs Nanocomposites on SiO2 Substrate.
Yu Sheng Tsai,Xin Dai Lin,Wei Lun Chan,Shang Che Tsai,Wei Jen Liao,YewChung Sermon Wu,Hsiang Chen +6 more
TL;DR: Owing to their compact size, simple fabrication, and low cost, ZnO/ZnS coreshell NRs/CNT/SiO2-based nanocomposites are promising for future industrial optoelectronic applications.
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Deposition of high-quality Ge film on Si by PECVD using GeCl4/H2 for fabricating near-infrared photodiodes
TL;DR: In this article , a tensile-strained, impurity-free, monocrystalline Ge film with a surface roughness of < 1 nm and a threading-dislocation density on the order of 104 cm−2 could be grown at a rate of ca. 80 nm/min at a substrate temperature of 450 °C without the need of any kind of buffer layer or post-annealing.
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Multianalyte Mg-Doped InGaZnO Electrolyte-Insulator-Semiconductor Biosensors and Multiple Material Characterizations of Membrane Nanostructures
Chyuan Haur Kao,Chia Shao Liu,Ssu Han Lu,Shang Che Tsai,Wei Lun Chan,Bo Hong Lin,Chun Fu Lin,Hsiang Chen,Jung Han +8 more
TL;DR: In this article, Mg-doped InGaZnO (IGZO) electrolyte-insulator-semiconductor (EIS) biosensors were fabricated with multianalyte sensing capability.
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Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics
TL;DR: In this paper , a partially strain-relaxed, impurity-free, monocrystalline GeSn film with a surface roughness of 6 nm and a threading-dislocation density of 1 × 107 cm−2 was demonstrated by using plasma-enhanced chemical vapor deposition (PECVD).