J
Jung Han
Researcher at Yale University
Publications - 295
Citations - 9381
Jung Han is an academic researcher from Yale University. The author has contributed to research in topics: Light-emitting diode & Gallium nitride. The author has an hindex of 49, co-authored 289 publications receiving 8122 citations. Previous affiliations of Jung Han include Purdue University & Sandia National Laboratories.
Papers
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The emergence and prospects of deep-ultraviolet light-emitting diode technologies
TL;DR: In this article, the authors reviewed recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices and described the key obstacles to enhancing their efficiency and how to improve their performance.
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu,Akira Uedono,Akira Uedono,Takeyoshi Onuma,Benjamin A. Haskell,Arpan Chakraborty,T. Koyama,Paul T. Fini,Stacia Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra,Shuji Nakamura,Shigeo Yamaguchi,Shigeo Yamaguchi,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki,Jung Han,Takayuki Sota +19 more
TL;DR: Here it is explained why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability, and it is concluded that localizing valence states associated with atomic condensates of In–N preferentially capture holes, which have a positive charge similar to positrons.
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AlGaN/GaN quantum well ultraviolet light emitting diodes
Jung Han,Mary H. Crawford,Randy J. Shul,Jeffrey J. Figiel,Michael A. Banas,L. Zhang,Yoon-Kyu Song,H. Zhou,Arto V. Nurmikko +8 more
TL;DR: In this article, the growth and characterization of ultraviolet GaN quantum well light emitting diodes with room-temperature electroluminescence emission at 353.6 nm with a narrow linewidth of 5.8 nm was reported.
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Stress evolution during metalorganic chemical vapor deposition of GaN
Sean J. Hearne,Eric Chason,Jung Han,Jerrold A. Floro,Jeffrey J. Figiel,John A. Hunter,Hiroshi Amano,Ignatius S. T. Tsong +7 more
TL;DR: In this paper, the evolution of stress in gallium nitride films on sapphire has been measured in real time during metalorganic chemical vapor deposition, and it was shown that GaN consistently grows in tension at 1050°C.
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Graded band gap ohmic contact to p‐ZnSe
Y. Fan,Jung Han,L. He,J. Saraie,Robert L. Gunshor,M. Hagerott,Heonsu Jeon,Arto V. Nurmikko,G. C. Hua,Nobuo Otsuka +9 more
TL;DR: In this paper, a low-resistance quasi-ohmic contact to p−ZnSe is described, which involves the injection of holes from heavily doped ZnTe into ZnSe via a Zn(Se,Te) pseudograded band gap region.