A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask

A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Photomask blank and method for manufacturing photomask

A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldablefilm (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Photomask blank, photomask and fabrication method thereof

PROBLEM TO BE SOLVED: To provide a halftone phase shift photomask using a molybdenum silicide-base halftone phase shift film material and having a structure with an enhanced etching selectivity ratio to a quartz substrate while retaining superior workability of the molybdenum silicide-base material and chemical stability after working. SOLUTION: A blank for the halftone phase shift photomask has a halftone phase shift layer on a transparent substrate and the halftone phase shift layer is formed from a multilayer film having at least a layer based on molybdenum silicide and containing oxygen and/or nitrogen and comprising two or more layers. A layer based on chromium, tantalum or a chromium-tantalum alloy is included in the multilayer film and this layer is disposed nearer the transparent substrate than the layer based on molybdenum silicide and containing oxygen and/or nitrogen. COPYRIGHT: (C)2002,JPO

Halftone phase shift photomask and blanks for the same

A halftone phase shift photomask designed so that it is possible to shorten the photoengraving process, use a production line for a conventional photomask, prevent lowering of the contract between the transparent and semitransparent regions at a long wavelength in the visible region, which is used for inspection and measurement, and also prevent charge-up during electron beam exposure, and that ordinary physical cleaning process can be used for the halftone phase shift photomask. The halftone phase shift photomask has on a transparent substrate (1) a region which is semitransparent to exposure light and a region which is transparent to the exposure light so that the phase difference between light passing through the transparent region and light passing through the semitransparent region is substantially π radians. A semitransparent film that constitutes the semitransparent region is arranged in the form of a multilayer film including layers (3, 4) of chromium or a chromium compound. For example, the layer (3) is formed of chromium oxide, chromium oxide nitride, chromium oxide carbide, or chromium oxide nitride carbide, and the layer (4) is formed of chromium or chromium nitride. The layer (3) mainly serves as a phase shift layer, while the layer (4) mainly serves as a transmittance control layer that suppresses the rise of transmittance at the long wavelength side. The semitransparent film is formed by physical vapor deposition.

Halftone phase shift photomask, halftone phase shift photomask blank, and methods of producing the same

PROBLEM TO BE SOLVED: To provide a mask blank suitable to a photomask for FPD, and the photomask. SOLUTION: The mask blank 10 is for manufacturing an FPD device, and has a substrate 12, a light shield film 14 formed on the substrate 12 by using metal silicide as a material, and an upper-layer film 16 formed on the light shield film 14 by using oxidized or oxynitrided metal silicide as a material. The light shield film 14 and upper-layer film 16 are films to be wet-etched by using an etching mask obtained by patterning a resist film 18 formed on the upper-layer film 16, and the resist film 18 is formed by discharging resist liquid onto the upper-layer film 16 from a nozzle having a resist liquid supply hole extending in one direction and also simultaneously moving the nozzle in a direction crossing the one direction relatively to the upper-layer film surface, the upper-layer film 16 being 50 to 300Å thick. COPYRIGHT: (C)2008,JPO&INPIT

Mask blank and photomask

PROBLEM TO BE SOLVED: To provide a method of manufacturing a phase shift mask blank having a semi-transparent film or a portion which has a prescribed phase angle and prescribed transmission, and superior film characteristics such as resistance to chemicals, resistance to light, and low in internal stress SOLUTION: The method is to manufacture the phase shift mask blank of halftone type with the semi-transparent film formed on a transparent substrate The semi-transparent film is made of a thin film mainly composed of nitrogen, metal and silicon, and formed on the transparent substrate Then, the thermal process for the semi-transparent film is carried out at a temp of not lower than 150 degC

Method of manufacturing phase shift mask blank and phase shift mask

PURPOSE: To prevent the degradation in sectional shape at the time of overetching by incorporating a chromium carbide, chromium nitride and chromium oxide into an antireflection film and decreasing the degree of oxidation of the antireflection film from a light transparent substrate toward a light shieldable thin film in the thickness direction thereof. CONSTITUTION: The 1st antireflection film 2 consists of the chromium carbonitrooxides and the degree of the oxidation thereof decreases from the light transparent substrate 1 toward the light shieldable thin film 3 in the thickness direction thereof. The degree of the oxidation of the antireflection film 2 is changed in the film thickness direction, by which the side etching rate is suppressed and the prescribed sectional shape is obtd. The etching rate of the antireflection film 2 is matched with the etching rate of the light shieldable thin film 3 laminated thereon by carbonizing the chromium. The formation of the film to the overhang-like sectional shape is prevented in this way. COPYRIGHT: (C)1992,JPO&Japio

PROBLEM TO BE SOLVED: To improve the dimensional accuracy of a halftone material film pattern of a halftone type phase shift mask manufactured by using a blank having a laminated structure of the halftone material film and a light shielding film. SOLUTION: The halftone type phase shift mask blank 1 having the halftone material film 3 on a transparent substrate 1 and the light shielding film consisting of a metallic film 4 and antireflection film 5 formed on the halftone material film 3 is formed by depositing the light shielding film in such a manner that the film thickness thereof attains a range from 50 to 77 nanometers. As a result, the difference in the film stress before and after the removal of the light shielding film is reduced in manufacturing the halftone type phase shift mask. COPYRIGHT: (C)2003,JPO

Halftone type phase shift mask blank and method of manufacturing halftone type phase shift mask blank

PROBLEM TO BE SOLVED: To obtain a halftone type phase shift mask and a halftone type phase shift mask blank, capable of high precision patterning and having high acid resistance and reliability SOLUTION: This phase shift mask blank has a transparent substrate 10, a halftone material film 11 laminated on the substrate 10, and a metal film 12 laminated on the film 11 The amount of an etching rate increasing component and/or an etching rate decreasing component in the metal film 12 is stepwise and/or continuously increased and/or decreased from the surface side toward the substrate 10 side, so that the etching rate of the film 12 is stepwise and/or continuously increased from the surface side toward the substrate 10 side

勝三井

Papers

Mask blank and photomask

Method of manufacturing phase shift mask blank and phase shift mask

Photomask blank and photomask

Halftone type phase shift mask blank and method of manufacturing halftone type phase shift mask blank

Halftone type phase shift mask blank and halftone type phase shift mask

勝 三井

Papers

Mask blank and photomask

Method of manufacturing phase shift mask blank and phase shift mask

Photomask blank and photomask

Halftone type phase shift mask blank and method of manufacturing halftone type phase shift mask blank

Halftone type phase shift mask blank and halftone type phase shift mask

勝三井