A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask

A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Photomask blank and method for manufacturing photomask

A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldablefilm (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Photomask blank, photomask and fabrication method thereof

To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at% and less than 5 at%, the Si content is from 1 to 25 at%, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

Reflective mask blank for euv lithography

PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask. SOLUTION: A light-shieldable film 12 is formed on one principal plane of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition metal nitride or silicon/transition metal oxynitride. The silicon-containing compound has a composition of 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, and 0 to 35 at% transition metal, and the transition metal is, for example, molybdenum (Mo). COPYRIGHT: (C)2006,JPO&NCIPI

Photomask blank, photomask and method for manufacturing the same

PROBLEM TO BE SOLVED: To improve the dimensional accuracy of a halftone material film pattern of a halftone type phase shift mask manufactured by using a blank having a laminated structure of the halftone material film and a light shielding film. SOLUTION: The halftone type phase shift mask blank 1 having the halftone material film 3 on a transparent substrate 1 and the light shielding film consisting of a metallic film 4 and antireflection film 5 formed on the halftone material film 3 is formed by depositing the light shielding film in such a manner that the film thickness thereof attains a range from 50 to 77 nanometers. As a result, the difference in the film stress before and after the removal of the light shielding film is reduced in manufacturing the halftone type phase shift mask. COPYRIGHT: (C)2003,JPO

Halftone type phase shift mask blank and method of manufacturing halftone type phase shift mask blank

PROBLEM TO BE SOLVED: To provide a substrate with a multilyer reflection film which is suitable for a reflection type mask to be used in a lithography method using an exposure light of a short wave band such as an EUV light, has high reflection rate, has high surface smoothness and has less defect. SOLUTION: The substrate with a multilayer reflection film is formed in such a way that a multilayer base film made of an alternate laminate film of Mo/Si, an intermediate layer made of an Si film, and a multilayer reflection film made of an alternate laminate film of Mo/Si for reflecting an exposure light, are successively provided on a substrate. This substrate satisfies a formula (1):n×dtop-0.05≤dbottom≤n×dtop+0.05 (where n is natural number of 1 or more), and a formula (2):m×dtop-1.2≤dSi≤m×dtop+1.2 (where m is integer of 0 or more), where dbottom [unit:nm] is the periodic length of the multilayer base film, dSi [unit:nm] is the thickness of the intermediate layer, and dtop [unit:nm] is the periodic length of the multilayer reflection film. COPYRIGHT: (C)2007,JPO&INPIT

Substrate with multilayer reflection film, manufacturing method thereof, reflection type mask blank and reflection type mask

PROBLEM TO BE SOLVED: To decrease the film stress in a light shielding film containing a layer having an antireflective function in the manufacture of a photomask blank. SOLUTION: The photomask blank 1 comprises a light shielding film containing an antireflection film 5 having an antireflective function and formed on a transparent substrate 2. The light shielding film has a layered structure of a first light shielding film 3 made of chromium nitride and a second light shielding film 4 made of chromium carbide as well as the antireflection film 5. The light shielding film is deposited to 60 to 77 nm total film thickness. COPYRIGHT: (C)2003,JPO

PROBLEM TO BE SOLVED: To provide a photomask and a method for manufacturing a photomask, in which the dry etching time can be shortened and a resist film reduction is reduced by increasing the dry etching speed of a light shielding film, and as a result, thinning (300nm or less) of the resist film can be performed, and pattern resolution and pattern accuracy (CD accuracy)can be improved, and furthermore, a photomask blank by which a light shielding film pattern having an excellent cross sectional shape can be formed by shortening the dry etching time. SOLUTION: The photomask blank having a light shielding film on a translucent substrate is a mask blank for dry etching process for dealing with a method for manufacturing the photomask blank comprising patterning the light shielding film using a resist pattern formed on the light shielding film as a mask. The light shielding film is composed of a material having a selectivity to the resist in excess of 1 in the dry etching processing. COPYRIGHT: (C)2006,JPO&NCIPI

Photomask blank, method for manufacturing photomask, and method for manufacturing semiconductor device

PROBLEM TO BE SOLVED: To provide a phase shift mask blank suitable for a mask for short wavelength exposure light source at a wavelength of 200 nm or shorter and having improved chemical resistance, light resistance and resistance against warm water, and to provide a halftone phase shift mask obtained by using the above phase shift mask blank. SOLUTION: The phase shift mask blank 10 has a light-semitransmitting film 2 having a predetermined transmittance at the wavelength of exposure and comprising nitrogen, metal and silicon as main constituents formed on a transparent substrate 1. After the light-semitransmitting film 2 is formed on the transparent substrate 1, the light-semitransmitting film 2 is acted upon by a high concentration ozone gas. The light-semitransmitting film 2 is patterned to obtain a halftone phase shift mask 20 formed with a light-semitransmitting portion 2a. COPYRIGHT: (C)2008,JPO&INPIT

Takayuki Yamada

Papers

Halftone type phase shift mask blank and method of manufacturing halftone type phase shift mask blank

Substrate with multilayer reflection film, manufacturing method thereof, reflection type mask blank and reflection type mask

Photomask blank, photomask and method for manufacturing the same

Photomask blank, method for manufacturing photomask, and method for manufacturing semiconductor device

Method of manufacturing phase shift mask blank and method of manufacturing phase shift mask