Showing papers by "Shey-Shi Lu published in 1992"
TL;DR: In this article, a small signal current gain of 236 and a small common-emitter offset voltage of 40 mV were achieved in InGaP/GaAs system heterojunction bipolar transistors (HBTs) with similar base dopings and thicknesses.
Abstract: Different emitter size, self-aligned In/sub 0.49/Ga/sub 0.51/P/GaAs tunneling emitter bipolar transistors (TEBTs) grown by gas source molecular beam epitaxy (GSMBE) with 100-AA barrier thickness and 1000-AA p/sup +/(1*10/sup 19/ cm/sup -3/) base have been fabricated and measured at room temperature. A small-signal current gain of 236 and a small common-emitter offset voltage of 40 mV were achieved without any grading. It is found that the emitter size effect on current gain was reduced by the use of a tunnel barrier. The current gain and the offset voltage obtained were the highest and lowest reported values to date, respectively, in InGaP/GaAs system heterojunction bipolar transistors (HBTs) or TEBTs with similar base dopings and thicknesses. >
16 citations
TL;DR: In this article, the authors measured the performance of different barrier thicknesses (50 and 100 A) at different temperatures (77 and 300 K) for the first time and achieved a current gain of 141 and an offset voltage of 50 mV at room temperature.
Abstract: Ga0.51In0.49P/GaAs tunneling emitter bipolar transistors (TEBTs) grown by gas source molecular beam epitaxy with different barrier thicknesses (50 and 100 A) have been fabricated and measured at different temperatures (77 and 300 K) for the first time. A current gain of 141 and an offset voltage of 50 mV at room temperature were achieved in the thick barrier (100 A) device with heavily doped p+ (1×1019 cm−3) base. The thinner device had a lower gain (∼53) than the thick barrier device at room temperature. The functional dependence of gain on thickness was attributed to carrier tunneling through the barrier inserted between the base and the emitter. The low‐temperature (77 K) results showed that the gain of the thick barrier device was almost the same as that at 300 K while that of the thin barrier device increased, which was explained by the nonequilibrium electron transport in the base.
9 citations
TL;DR: The first lattice-matched Ga0.51 In0.49P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy was reported in this article.
Abstract: The first lattice-matched Ga0.51 In0.49P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy is reported. Small signal current gains exceeding 590 and small offset voltages ( 120 meV) were obtained. These results demonstrate that (GaIn)P is a good alternative to the (AlGa)As in GaAs-based devices.
3 citations
1 citations
21 Apr 1992
TL;DR: In this article, the DC performance of the GaInP/GaAs TEBT with different barrier thicknesses (50 AA and 100 AA) at different temperatures (77 K and 300 K) was investigated and a very high current gain of 214 and a small offset voltage of 40 mV were achieved without the need of grading.
Abstract: The authors fabricated In/sub 0.49/Ga/sub 0.51/P/GaAs tunneling emitter bipolar transistors (TEBTs). The DC performance of the GaInP/GaAs TEBT with different barrier thicknesses (50 AA and 100 AA) at different temperatures (77 K and 300 K) was investigated. It was found that a very high current gain of 214 and a very small offset voltage of 40 mV were achieved without the need of grading. The gain of the thick barrier device at 77 K was almost the same as that at 300 K, while that of the thin barrier device increased when the temperature was lowered. A tunneling barrier of 100 AA could effectively block most of the hole flow from base to emitter and a DC gain comparable to conventional graded emitter HBT was achieved at room temperature. A thinner barrier of 50 AA suffered from more hole tunneling and had lower DC gain at room temperature. However, the gain of the thin barrier device increased at low temperature due to the shorter base transit time while the gain of the thick barrier device was almost unchanged due to the balance between the non-equilibrium and the diffusive electrons. >
1 citations