A method and system for preparing polysilicon slim rods, the method and system including: placing a piece of polysilicon on a fixture; applying a predetermined laser beam or abrasive jet to the piece of polysilicon; and separating a polysilicon slim rod from the piece of polysilicon. The laser beam may be used for either cutting or for cracking depending on the operating parameters chosen. There may also be various combinations of cutting and cracking used in order to separate the slim rod from the piece of polysilicon. For example, the laser cut may be a scribing and/or partial cut and the separation may be completed by cracking the remaining silicon. In this case, the cracking may be accomplished by, for example, mechanical bending or laser cracking. Generally speaking, a laser beam used for cracking may be different from and have differing operating parameters from a laser beam used for cutting.

Systems and methods for producing silicon slim rods

The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.

Process for producing polycrystalline silicon

The invention relates to the technical field of subsequent processing for silicon ingots, in particular to a method for manufacturing a silicon rod for slicing by processing a polycrystalline silicon ingot. The method comprises the following process steps of: A. fixing the polycrystalline silicon ingot on truncation equipment, and truncating an impurity layer at the top of the polycrystalline silicon ingot; B. truncating a top low-minority carrier lifetime part and a bottom low-minority carrier lifetime part of the silicon ingot from the silicon ingot; C. fixing the silicon ingot on a square-root extraction machine table, carrying out square-root extraction on the silicon ingot, and truncating the impurity layer around the silicon ingot; and D. washing and detecting a silicon block obtained after square-root extraction to obtain the finished product of the silicon rod for slicing. The method has fewer working procedures of minority carrier lifetime detection and low-minority carrier lifetime layer truncation and low processing cost and is beneficial to the improving of the production capacity.

Method for manufacturing silicon rod for slicing by processing polycrystalline silicon ingot

An apparatus for producing polycrystalline silicon in which raw gas including silicon compounds is introduced into a reactor, in which electric current is supplied to silicon seed rods in the reactor so as to heat the silicon seed rods, and in which polycrystalline silicon is deposited on surfaces of the silicon seed rods and grown to rods, the apparatus has: a bell jar having a circumferential wall forming a chamber of the reactor and a jacket covering the circumferential wall, and in which a cooling path formed between the circumferential wall and the jacket that allows cooling medium including water to flow therethrough; a coolant feeding system which is connected to the bell jar so as to feed the cooling medium to the cooling path; a coolant recovering system which is connected to the bell jar so as to recover the cooling medium from the cooling path; a pressure control part controlling a pressure in the cooling path; and a flow-rate control part controlling a flow rate of the cooling medium, wherein the cooling medium flows in the cooling path as boiling two-phase flow by controlling the pressure and flow rate of the cooling medium.

Apparatus for producing polycrystalline silicon

When a plate-like sample 20 extracted from a polycrystalline rod is evaluated, peaks can appear in a φ-scanning chart The smaller the number of such peaks, and the narrower the half-value width of the peak, the more suitable the polycrystalline silicon rod is as a raw material for producing single-crystal silicon It is preferable that the number of peaks in the φ-scanning chart is, for both the Miller index planes and , equal to or smaller than 24/cm 2 when converted into unit per area of the plate-like sample It is also preferable that the value obtained by multiplying the peak half-value width by δL=2 1/2 πR 0 /360, where R 0 is the radius of the sample, is defined as an inhomogeneous crystal grain size, and that a polycrystalline silicon rod of which all the inhomogeneous crystal grain sizes are smaller than 05 mm is selected as a raw material for producing single-crystal silicon

Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single-crystal silicon

Provided is a clean high-purity polycrystalline silicon mass that has a low total content of chromium, iron, nickel, copper, and cobalt, which are heavy-metal impurities that cause a decrease in the quality of single-crystal silicon In the vicinity of each electrode-side end of a polycrystalline silicon rod obtained by the Siemens method, the total concentration of chromium, iron, nickel, copper, and cobalt is high Prior to the step of crushing the polycrystalline silicon rod (100), a cutting step is hence conducted in which the polycrystalline silicon parts of the polycrystalline silicon rod (100) taken out of the reactor which extend from the electrode-side ends to a distance of at least 70 mm therefrom are removed Thus, the polycrystalline silicon parts in which the total concentration of chromium, iron, nickel, copper, and cobalt in the bulk is 150 ppta or higher can be removed A polycrystalline silicon mass having a lower impurity concentration may be obtained by removing the polycrystalline silicon parts each extending to a distance of at least 155 mm

Polycrystalline silicon mass and process for producing polycrystalline silicon mass

A polycrystalline silicon bar, which is grown through the deposition by a chemical vapor deposition method, and which has such a property that, when plate-like samples each having a cross-section surface perpendicular to the longer axis direction of the polycrystalline silicon bar as the main surface are collected and an X-ray diffraction measurement in all directions in the cross-section surface is carried out on all of the collected plate-like samples, any X-ray diffraction peak having a diffraction intensity deviated from a value "(average value) ± 2 (standard deviation) (μ ± 2σ)" in faces , , and in mirror indexes is not observed. The polycrystalline silicon bar is deemed as being non-orientational and is selected as a raw material for the production of single-crystalline silicon. When the polycrystalline silicon raw material is used, the local occurrence of partially remaining melt can be prevented, which contributes to the steady production of single-crystalline silicon.

Method for selecting polycrystalline silicon bar, and method for producing single-crystalline silicon

An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R = [Cr] + [Ni] - 1.5 [Si], is not less than 40% wherein[Cr]is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).

Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon

PROBLEM TO BE SOLVED: To provide a method for producing a polycrystalline silicon rod, in which a polycrystalline silicon material can be cleaned while realizing simplification and cost reduction of a production process thereof.SOLUTION: The method for producing the polycrystalline silicon rod comprises: a step (S101) of synthesizing the polycrystalline silicon rod by a Siemens method; a step (S103) of laying a plastic bag, the inside surface of which is cleaned, over the polycrystalline silicon rod from above in a reactor to house the polycrystalline silicon rod therein; a step (S104) of withdrawing the housed polycrystalline silicon rod to the outside of the reactor; and a step (S105) of heat-sealing the rod-housed plastic bag and storing the polycrystalline silicon rod in a hermetically-sealed state. Since a cleaning step, an etching step and a water washing step, which are essential steps up to now, are not always necessitated, each of the residual fluorine ion, the residual nitrate ion, and the residual nitrogen dioxide ion on the surface thereof can be made smaller than 0.2ppbw. Since the plastic bag is laid thereon, a metal contamination level is made remarkably lower. If the polycrystalline silicon rod is handled in this manner, contamination of the surface thereof is hardly progressed even when stored over a long period of time.

Shigeyoshi Netsu

Papers

Polycrystalline silicon mass and process for producing polycrystalline silicon mass

Method for selecting polycrystalline silicon bar, and method for producing single-crystalline silicon

Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon

Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single-crystal silicon

Method for producing polycrystalline silicon rod, polycrystalline silicon rod, and polycrystalline silicon mass