Patent
Polycrystalline silicon mass and process for producing polycrystalline silicon mass
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TLDR
In this paper, a clean high-purity polycrystalline silicon mass that has a low total content of chromium, iron, nickel, copper, and cobalt is obtained by removing the poly-stalline silicone parts each extending to a distance of at least 155 mm.Abstract:
Provided is a clean high-purity polycrystalline silicon mass that has a low total content of chromium, iron, nickel, copper, and cobalt, which are heavy-metal impurities that cause a decrease in the quality of single-crystal silicon In the vicinity of each electrode-side end of a polycrystalline silicon rod obtained by the Siemens method, the total concentration of chromium, iron, nickel, copper, and cobalt is high Prior to the step of crushing the polycrystalline silicon rod (100), a cutting step is hence conducted in which the polycrystalline silicon parts of the polycrystalline silicon rod (100) taken out of the reactor which extend from the electrode-side ends to a distance of at least 70 mm therefrom are removed Thus, the polycrystalline silicon parts in which the total concentration of chromium, iron, nickel, copper, and cobalt in the bulk is 150 ppta or higher can be removed A polycrystalline silicon mass having a lower impurity concentration may be obtained by removing the polycrystalline silicon parts each extending to a distance of at least 155 mmread more
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Process for producing polycrystalline silicon
TL;DR: In this article, a process for producing polycrystalline silicon is proposed, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and used in a second deposition process of that second reactor.
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Method for producing polycrystalline silicon rod, polycrystalline silicon rod, and polycrystalline silicon mass
TL;DR: In this article, the authors proposed a method for producing polycrystalline silicon rods, in which a poly-crystaline silicon material can be cleaned while realizing simplification and cost reduction of a production process thereof.
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Polycrystalline silicon crystal orientation degree evaluation method, polycrystalline silicon rod selection method, polycrystalline silicon rod, polycrystalline silicon ingot, and polycrystalline silicon fabrication method
TL;DR: In this article, the degree of crystalline orientation of polycrystalline silicon is evaluated by an X-ray diffraction method, where each obtained disc-like sample 20 is disposed in a position where Bragg reflection from a Miller index face is detected and in-plane rotated at a rotational angle φ with the center of the disc like sample 20 as the centre of rotation.
References
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Patent
Polycrystal silicon rod and production process therefor
Junichi Kubota,Hiroyuki Oda +1 more
TL;DR: A polycrystal silicon rod characterized in that it has a half value width of a peak indicative of crystal orientation (111) of an X-ray diffraction pattern, of 0.3° or less, an internal strain rate in a radial direction of less than 5.0×10-5 cm-1 and an internal iron concentration was 0.5 ppba or less as mentioned in this paper.
Patent
Single crystal silicon.
Shuji Yokota,Hirotoshi Yamagishi +1 more
TL;DR: In this article, single crystal silicon for a substrate of semiconductor integrated circuits is disclosed, and Cu, Fe, Ni and Cr are contained as impurities in a concentration smaller than 0.1 ppta.
Journal ArticleDOI
Multiple Czochralski growth of silicon crystals from a single crucible
R.L. Lane,A.H. Kachare +1 more
TL;DR: In this article, an apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible, and can thus offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.
Patent
Method for cleansing polycrystalline silicon
Kiichiro Asako,Tsumoru Masui,Tadashi Niwayama,Takanari Shimizu,Masatake Yamamoto,Shuji Yokota,誠剛 山本,正 庭山,積 桝井,修二 横田,喜一郎 浅子,敬也 清水 +11 more
TL;DR: In this article, the authors proposed to remove silicon oxide films and impurities from a highly pure polycrystalline silicon by cleansing the silicon with an aqueous cleansing solution comprising hydrofluoric acid, hydrogen peroxide and water with minimized deterioration and discoloration of the solution.
Patent
Cleaning method for polysilicon
TL;DR: In this paper, the authors proposed a method to remove organic substances, fine grains and metallic impurities adhered to the surface of polysilicon at a low cost to increase the yield of polycrystalline silicon.