Light-emitting diodes (LEDs) come in many varieties and with a wide range of radiation patterns. We propose a general, simple but accurate analytic representation for the radiation pattern of the light emitted from an LED. To accurately render both the angular intensity distribution and the irradiance spatial pattern, a simple phenomenological model takes into account the emitting surfaces (chip, chip array, or phosphor surface), and the light redirected by both the reflecting cup and the encapsulating lens. Mathematically, the pattern is described as the sum of a maximum of two or three Gaussian or cosine-power functions. The resulting equation is widely applicable for any kind of LED of practical interest. We accurately model a wide variety of radiation patterns from several world-class manufacturers.

Modeling the radiation pattern of LEDs

Enhancement of light extraction from light emitting diodes

Color Conversion Materials for High-Brightness Laser-Driven Solid-State Lighting

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS. (c) 2008 American Institute of Physics.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

A novel LED modeling algorithm for precise three-dimensional light pattern simulation is proposed and demonstrated. We propose to use normalized cross correlation to verify the validity of the simulation in one-dimensional intensity patterns as well as two-dimensional irradiance patterns in various midfield distances and to provide feedback to achieve a successful model. The model is demonstrated to obtain an average of 99% in normalized cross correlation between the simulation light pattern and experimental measurement for a truncated inverse pyramid LED.

Precise optical modeling for LED lighting verified by cross correlation in the midfield region

The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

Analysis of position-dependent light extraction of GaN-based LEDs.

In this paper, a down-size sintering scheme for making high-performance diffusers with micro structure to perform beam shaping is presented and demonstrated. By using down-size sintering method, a surface-structure film is designed and fabricated to verify the feasibility of the sintering technology, in which up to 1/8 dimension reduction has been achieved. Besides, a special impressing technology has been applied to fabricate diffuser film with various materials and the transmission efficiency is as high as 85% and above. By introducing the diffuser into possible lighting applications, the diffusers have been shown high performance in glare reduction, beam shaping and energy saving.

Surface-structured diffuser by iterative down-size molding with glass sintering technology

In this paper, we propose a novel LED modeling algorithm for precise 3-D light pattern simulation. Normalized cross correlation is proposed to to verify the validity of the simulation in 1-D intensity pattern as well as 2-D irradiance pattern in various mid-field distances. The model is demonstrated to obtain more than 98% in normalized cross correlation between the simulation light pattern and experimental measurement for a TIP LED emitter by Lumileds.

Shih Hsin Ma

Papers

Precise optical modeling for LED lighting verified by cross correlation in the midfield region

Analysis of position-dependent light extraction of GaN-based LEDs.

Surface-structured diffuser by iterative down-size molding with glass sintering technology

Optical modeling for LED in mid-field region

Rotation selectivity of random phase encoding in volume holograms