Showing papers by "Shizuo Fujita published in 1981"
TL;DR: In this article, the spatial and energetic distributions of the trap state density in Si3N4 layers on Si substrates are determined by measuring the amount of transferred charge in MNS diodes.
Abstract: Charge transfer processes in metal-nitride-semiconductor (MNS) diodes are investigated. The spatial and energetic distributions of the trap state density in Si3N4 layers on Si substrates are determined by measuring the amount of transferred charge in MNS diodes. We apply to MNS diodes relatively wide and low-pulsed voltages so that trap states spatially distributed deep in the Si3N4 layer can be examined, and we analyze the electronic properties of the trap states without any pre-assumptions as made in past analyses. The results show that (i) charging and discharging processes are mainly due to direct tunneling of electrons, (ii) donor-like trap states lie near the mid-gap of the Si3N4 layer on an Si substrate, (iii) they are distributed uniformly in the region of 26–44 A from the Si/Si3N4 interface, and (iv) their density is 3×1019 cm-3.
17 citations
5 citations
TL;DR: In this paper, the localized state density in chemically vapour deposited amorphous silicon over a wide energy range was measured for the first time as 10 18 ∼ 10 20 cm −3 eV −1 in the range ± 0.4∼±0.5 eV around the Fermi level.
Abstract: New techniques to determined the localized-state density in chemically vapour deposited amorphous silicon over a wide energy range by the field-effect method are presented. The density is measured for the first time as 10 18 ∼ 10 20 cm −3 eV −1 in the range ±0.4∼±0.5 eV around the Fermi level. From the results it is suggested that the silicon atom network of CVD a-Si has a similar randomness to that of glow discharge a-Si, providing a density of tail states of about 10 19 ∼ 10 20 cm −3 eV −1 and native defect states of about 10 18 cm −3 eV −1 .
3 citations