We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

The term 'photonics' describes a technology whereby data transmission and processing occurs largely or entirely by means of photons. Photonic crystals are microstructured materials in which the dielectric constant is periodically modulated on a length scale comparable to the desired wavelength of operation. Multiple interference between waves scattered from each unit cell of the structure may open a 'photonic bandgap'--a range of frequencies, analogous to the electronic bandgap of a semiconductor, within which no propagating electromagnetic modes exist. Numerous device principles that exploit this property have been identified. Considerable progress has now been made in constructing two-dimensional structures using conventional lithography, but the fabrication of three-dimensional photonic crystal structures for the visible spectrum remains a considerable challenge. Here we describe a technique--three-dimensional holographic lithography--that is well suited to the production of three-dimensional structures with sub-micrometre periodicity. With this technique we have made microperiodic polymeric structures, and we have used these as templates to create complementary structures with higher refractive-index contrast.

Fabrication of photonic crystals for the visible spectrum by holographic lithography

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

http://science.sciencemag.org/content/sci/311/5758/208.full.pdf

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of ‘soft adhesion’ to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp

A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular‐beam epitaxy. Structure and optical properties are investigated. Reflection high‐energy electron‐diffraction observation reveals that an InAs layer forms a three‐dimensional structure with specific facets after two‐dimensional growth. The transmission electron microscope observation shows that these structures have structural anisotropy in the growth plane. Photoluminescense spectroscopy shows that the luminescence from the InAs structures exhibits the polarization property caused by the quantum dot effect of the structural anisotropy.

Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs

Summary form only given. An important issue for photonic crystals is how to realize 3D photonic crystals in the optical wavelength region. In this paper, we propose a new method by utilizing a wafer-bonding technique combined with a microfabrication technique.

New realization method of three-dimensional photonic crystal in optical wavelength region

Origin of memory traps in chemically vapor‐deposited silicon nitride films was investigated. Electron‐spin resonance and infrared absorption measurements revealed the existence of silicon dangling bonds which have three‐folded configuration. Correlation between the spin density and the metal‐nitride‐oxide‐semiconductor (MNOS) memory characteristics was studied, and it was suggested that silicon dangling bonds are responsible for the trap states which cause not only hopping conduction, but also memory behavior. A model is presented suggesting that the dangling bonds are positively, neutrally, or negatively ionized. The MNOS memory behavior and the energy level of the traps were well interpreted by taking into account the transition of the dangling bonds.

https://iopscience.iop.org/article/10.1149/1.2113850/pdf

Dangling Bonds in Memory‐Quality Silicon Nitride Films

We describe a form of deposition in which material is vaporized in a crucible and the vapor then ejected through a fine nozzle at the focus of an electron beam in a high vacuum. The vapor, on emerging from the nozzle, is partially condensed into clusters that are ionized by electron bombardment and then accelerated onto the substrate. The deposited films show good adhesion and large crystallite size. Examples include the deposition of Cu onto glass, Si onto Si, and ZnS onto NaCl.

Ionized cluster beam deposition

Compositional inhomogeneity in a GaInN ternary alloy layer is investigated A theoretical estimation of the interaction parameter based on the delta lattice parameter suggests that the immiscibility of InN in a nitride alloy is very strong We investigate the compositional splitting and the existence of InN inclusion in the GaInN epilayer grown on sapphire (0001) substrates The mechanism of compositional inhomogeneity is discussed

Akio Sasaki

Papers

Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs

New realization method of three-dimensional photonic crystal in optical wavelength region

Dangling Bonds in Memory‐Quality Silicon Nitride Films

Ionized cluster beam deposition

Compositional inhomogeneity and immiscibility of a GaInN ternary alloy