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Shizuo Fujita
Researcher at Kyoto University
Publications - 360
Citations - 11151
Shizuo Fujita is an academic researcher from Kyoto University. The author has contributed to research in topics: Thin film & Chemical vapor deposition. The author has an hindex of 49, co-authored 351 publications receiving 9904 citations. Previous affiliations of Shizuo Fujita include Ryukoku University & Osaka University.
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Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
TL;DR: In this article, the optical properties of ZnCdSe/ZnSSe strained-layer single-and multiple-quantum wells (SQWs and MQWs) fabricated by metalorganic molecular beam expitaxy (MOMBE) were investigated in detail by means of photoluminescence, photoluminance excitation and absorption spectral measurements.
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Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition
TL;DR: In this paper , the authors focus on mist chemical vapor deposition (MCVD) for phase control in a single-phase Ga[Formula: see text]O[formula] of [Formula]O [formula]: see text], [Formulas: see texts] of the substrate materials, and features of this growth method for phase controlling are emphasized.
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Oriented growth of beta gallium oxide thin films on yttrium-stabilized zirconia substrates
TL;DR: In this article, β-Ga2O3 thin films were grown on yttrium-stabilized zirconia (YSZ) substrates using a mist chemical vapor deposition (CVD) method and the lowest full width at half maximum value in ω-scan X-ray diffraction was 050°, obtained for the growth temperature of 650 °C on a YSZ(100) substrate.
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Organometallic vapor-phase epitaxial growth of cubic ZnCdS lattice-matched to GaAs substrate
TL;DR: In this paper, the authors investigated alloy composition and crystallographic properties of Zn1-xCdxS epilayers on GaAs substrates in terms of the growth parameters, and discussed the growth characteristics.
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Tin oxide coating by nonvacuum-based mist chemical vapor deposition on stainless steel separators for polymer electrolyte fuel cells
TL;DR: In this paper, the authors proposed a pretreatment of SUS substrates to enhance the strength of SnO2 adhesion to the substrates and showed stable operation for more than 1000 h without the SnO 2 films peeling off of or severe degradation of the separators.