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Shizuo Fujita
Researcher at Kyoto University
Publications - 360
Citations - 11151
Shizuo Fujita is an academic researcher from Kyoto University. The author has contributed to research in topics: Thin film & Chemical vapor deposition. The author has an hindex of 49, co-authored 351 publications receiving 9904 citations. Previous affiliations of Shizuo Fujita include Ryukoku University & Osaka University.
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Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
TL;DR: In this paper, the authors performed time-resolved photoluminescence (PL) spectroscopy at 18 K on excitonic-related emissions in an unintentionally doped hexagonal GaN epitaxial layer grown by two-flow metalorganic chemical vapor deposition (TF‐MOCVD).
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Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnS
TL;DR: In this paper, the authors investigated the growth rate enhancement by xenon lamp irradiation in organometallic vapor phase epitaxy (OMVPE) of ZnSe and ZnS II-VI semiconductors.
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Spatial composition fluctuations in blue-luminescent ZnCdO semiconductor films grown by molecular beam epitaxy
Keiichiro Sakurai,Tsuyoshi Takagi,Takeshi Kubo,Daisuke Kajita,Tetsuhiro Tanabe,Hidemi Takasu,Shizuo Fujita,Shigeo Fujita +7 more
TL;DR: In this paper, the optical and structural properties of textured ZnCdO films that exibit a newly found distinct blue luminescence have been investigated and models for the blue-luminescence process are proposed.
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Structural and electrical properties of ta2o5grown by the plasma-enhanced liquid source cvd using penta ethoxy tantalum source
TL;DR: In this article, structural and electrical properties of tantalum penta oxide (Ta2O5) material with a high dielectric constant grown from a penta ethoxy tantalum [Ta(OC2H5)5] liquid source by the plasmaenhanced liquid source chemical vapor deposition (PE-LS-CVD) technique were investigated.
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Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition
TL;DR: In this paper, single-crystal beta gallium oxide (β-Ga2O3) films were fabricated by the mist chemical vapor deposition method, and the optimum growth temperatures were found to be 700-800 °C.