scispace - formally typeset
S

Shubham Duttagupta

Researcher at National University of Singapore

Publications -  76
Citations -  1050

Shubham Duttagupta is an academic researcher from National University of Singapore. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 12, co-authored 69 publications receiving 783 citations.

Papers
More filters
Journal ArticleDOI

Optimised Antireflection Coatings using Silicon Nitride on Textured Silicon Surfaces based on Measurements and Multidimensional Modelling

TL;DR: In this article, the reflection and absorption losses of textured Si wafers coated with various SiNx films are quantified using 2D modeling. And it is shown that very good optical and excellent surface passivation quality can be realized on textured silicon wafer using inline deposited plasma silicon nitride, which is the state-of-the-art antireflection coating for silicon wafer solar cells.
Journal ArticleDOI

monoPoly™ cells: Large-area crystalline silicon solar cells with fire-through screen printed contact to doped polysilicon surfaces

TL;DR: In this article, a single-sided application of polysilicon (poly-Si) layer was used to achieve a very promising cell efficiency of 21.4% on large-area (244.3 cm2) n-type monocrystalline wafers with screen-printed and fire-through metal contacts on both sides.
Journal ArticleDOI

A Systematic Loss Analysis Method for Rear-Passivated Silicon Solar Cells

TL;DR: In this paper, an example monocrystalline silicon localized back surface field solar cell type is examined using a systematic routine that breaks down the factors limiting open-circuit voltage, shortcircuit current, and fill factor to identify the cell structure's headroom for improvement.
Journal ArticleDOI

Metal contact recombination in monoPoly solar cells with screen-printed & fire-through contacts

TL;DR: In this paper, a detailed analysis of the contact properties with screen printed fire-through (FT) metal pastes on phosphorus doped (n+) polysilicon (poly-Si) layers is presented.