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Shusheng Pan
Researcher at Guangzhou University
Publications - 8
Citations - 184
Shusheng Pan is an academic researcher from Guangzhou University. The author has contributed to research in topics: Responsivity & Neuromorphic engineering. The author has an hindex of 4, co-authored 8 publications receiving 82 citations. Previous affiliations of Shusheng Pan include Hefei Institutes of Physical Science.
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Flexible artificial nociceptor using a biopolymer-based forming-free memristor.
TL;DR: The flexible Ag/carboxymethyl ι-carrageenan/ITO/PET forming-free memristors for the electronic receptors showed threshold switching characteristics with a high ION/IOFF ratio of ∼104 and good switching endurance (>1.5 × 105 cycles), and a pressure sensory alarm system was built by using the artificial nociceptor devices.
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Memristive synapses with high reproducibility for flexible neuromorphic networks based on biological nanocomposites
Jun Ge,Dongyuan Li,Changqiao Huang,Xuanbo Zhao,Jieli Qin,Huanyu Liu,Weiyong Ye,Wenchao Xu,Zhiyu Liu,Shusheng Pan +9 more
TL;DR: These devices show highly reproducible analog resistive switching behaviors with 250 conductance states, low write noise, good write linearity, high retention of more than 104 s and endurance for at least 106 pulses and enable broader applications of biomaterials in flexible memristive devices and neuromorphic systems.
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High sensitivity and rapid response ultraviolet photodetector of a tetragonal CsPbCl 3 perovskite single crystal
TL;DR: In this article, a 0.5mm CsPbCl3 perovskite single crystal with tetragonal structure and a direct band gap of 2.86 ± 0.3
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A sub-500 mV monolayer hexagonal boron nitride based memory device
Jun Ge,Haiming Huang,Zelin Ma,Weilong Chen,Xucheng Cao,Huaheng Fang,Jianfeng Yan,Zhiyu Liu,Weiliang Wang,Shusheng Pan +9 more
TL;DR: In this paper, an interfacial polymer layer is inserted between the monolayer hexagonal boron nitride (h-BN) and top electrodes, which not only helps to constrain the conducting filament size but also blocks the formation of excess filaments from the bottom Cu foil.
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Ultrahigh detectivity ultraviolet photodetector based on orthorhombic phase CsPbI3 microwire using temperature self-regulating solar reactor
TL;DR: In this article, a temperature self-regulating solar reactor based on VO2 thermochromic coating is demonstrated, which can be used for energy saving solution phase reactor for synthesizing high quality inorganic materials.