S
Shyh-Jer Huang
Researcher at National Cheng Kung University
Publications - 35
Citations - 283
Shyh-Jer Huang is an academic researcher from National Cheng Kung University. The author has contributed to research in topics: Light-emitting diode & Epitaxy. The author has an hindex of 11, co-authored 35 publications receiving 243 citations. Previous affiliations of Shyh-Jer Huang include National Chiao Tung University & University of California, Los Angeles.
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Discrete monolayer light emission from GaSb wetting layer in GaAs
TL;DR: In this paper, the authors derived the band offset parameter between GaSb and GaAs by fitting the experimental data with the theoretical calculated result using an 8×8 k∙p Burt's Hamiltonian along with the Bir-Picus deformation potentials.
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Investigation of etch characteristics of non-polar GaN by wet chemical etching
Hsiao-Chiu Hsu,Yan-Kuin Su,Yan-Kuin Su,Shin-Hao Cheng,Shyh-Jer Huang,Jia-Ming Cao,Kuan-Chun Chen +6 more
TL;DR: In this paper, the surface morphology of a-plane GaN was investigated by using different combination ratios of H 3 PO 4 and H 2 SO 4 etching media, and the etch density was determined as 3.1 × 10 8 ǫ −2 by atom force microscopy (AFM).
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Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure
TL;DR: A step-stage InGaN/GaN multiquantum-well (MQW) structure can enhance the efficiency of GaN-based light-emitting diodes (LEDs) as mentioned in this paper.
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Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition
TL;DR: In this paper, the authors demonstrated the direct growth of nonpolar a-plane GaN on an r-plane sapphire by metal organic chemical vapor deposition (MOCVD) without any buffer layer.
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The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer
TL;DR: In this paper, a concave nano-pattern sapphire substrate was fabricated and its nitride epitaxial growth process was evaluated in a step-by-step manner, and a SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano pattern to reduce dislocation reformation.