I have developed "tennis elbow" from lugging this book around the past four weeks, but it is worth the pain, the effort, and the aspirin. It is also worth the (relatively speaking) bargain price. Including appendixes, this book contains 894 pages of text. The entire panorama of the neural sciences is surveyed and examined, and it is comprehensive in its scope, from genomes to social behaviors. The editors explicitly state that the book is designed as "an introductory text for students of biology, behavior, and medicine," but it is hard to imagine any audience, interested in any fragment of neuroscience at any level of sophistication, that would not enjoy this book. The editors have done a masterful job of weaving together the biologic, the behavioral, and the clinical sciences into a single tapestry in which everyone from the molecular biologist to the practicing psychiatrist can find and appreciate his or

Principles of Neural Science

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

/pdf/metal-oxide-semiconductor-thin-film-transistors-for-flexible-16f7s8g8at.pdf

Metal oxide semiconductor thin-film transistors for flexible electronics

Iontronics is a newly emerging interdisciplinary concept which bridges electronics and ionics, covering electrochemistry, solid-state physics, electronic engineering, and biological sciences. The recent developments of electronic devices are highlighted, based on electric double layers formed at the interface between ionic conductors (but electronically insulators) and various electronic conductors including organics and inorganics (oxides, chalcogenide, and carbon-based materials). Particular attention is devoted to electric-double-layer transistors (EDLTs), which are producing a significant impact, particularly in electrical control of phase transitions, including superconductivity, which has been difficult or impossible in conventional all-solid-state electronic devices. Besides that, the current state of the art and the future challenges of iontronics are also reviewed for many applications, including flexible electronics, healthcare-related devices, and energy harvesting.

Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics

Devices integrated with self-healing ability can benefit from long-term use as well as enhanced reliability, maintenance and durability. This progress report reviews the developments in the field of self-healing polymers/composites and wearable devices thereof. One part of the progress report presents and discusses several aspects of the self-healing materials chemistry (from non-covalent to reversible covalent-based mechanisms), as well as the required main approaches used for functionalizing the composites to enhance their electrical conductivity, magnetic, dielectric, electroactive and/or photoactive properties. The second and complementary part of the progress report links the self-healing materials with partially or fully self-healing device technologies, including wearable sensors, supercapacitors, solar cells and fabrics. Some of the strong and weak points in the development of each self-healing device are clearly highlighted and criticized, respectively. Several ideas regarding further improvement of soft self-healing devices are proposed.

Advanced Materials for Use in Soft Self-Healing Devices.

In this review, we discuss the merits of solution-processed metal oxide semiconductors and consider their application in thin-film transistors for large-area electronics.

Solution-processable metal oxide semiconductors for thin-film transistor applications

Electrical double layer transistors using ionic liquids as the gate and ZnO as the semiconductor exhibit stable operation in the presence of redox active additives. The characteristics of the device enable single components with the response of a Schmitt trigger.

/pdf/schmitt-trigger-using-a-self-healing-ionic-liquid-gated-28ng909hd6.pdf

Schmitt Trigger Using a Self‐Healing Ionic Liquid Gated Transistor

High performance low temperature solution-processed zinc oxide thin film transistor

For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is desired. The inherently high charge densities needed to modulate MITs make this difficult to achieve. The high capacitance of ionic liquids are attractive but, voltages are needed that can be in excess of the electrochemical stability of the system. Here, we show temperature/resistivity data that suggest electrostatic modulation of the MIT temperature of NdNiO3 in a wide regime. However, additional voltammetric and x-ray photoelectron spectroscopy measurements demonstrate the electrochemical impact of the electrostatic doping approach with ionic liquids.

The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

The electric transport properties of nanoparticulate zinc oxide (ZnO) thin films are investigated in nitrogen and ambient atmosphere with respect to the effects of polymer adsorbates, in order to study the origin of hysteresis behavior of ZnO thin film transistors. A strong dependence on the polymer adsorbate of the conductivity in nitrogen atmosphere is observed. Utilizing the space charge limited current theory, the trap depth and concentration in the films have been estimated. According to this analysis, the low conductivity of polymer free thin films in ambient atmosphere is caused by an increase in deep traps, compensating free charge carriers and not by a reduction in donorlike defect states. Furthermore, polymeric additives seem to induce similar trap states, which make the transport properties less sensitive against atmospheric influences. However, the strongly compensated semiconductor created in this way, causes a slow trap and release behavior resulting in a strong hysteresis in the transistor ...

Trap states and space charge limited current in dispersion processed zinc oxide thin films

In order to build printable inorganic electronic devices, semiconducting suspensions are needed, which can be processed at low temperatures using low-cost manufacturing techniques. Stabilized suspensions made of zinc oxide (ZnO) nanoparticles were used to fabricate field-effect transistors by spin coating. The performance of the devices is strongly affected by the nature and concentration of the compounds added to stabilize the nanodispersions. An increase in the field-effect mobility by more than one order of magnitude is obtained upon increasing the stabilizer concentration from 3 to 13 wt %. A further increase in the concentration above 13 wt % results in a decrease in the field-effect mobility. This behavior can be explained by changes in the morphology, the particle-particle junction, and the passivation of surface defect sites.

Simon Bubel

Papers

Schmitt Trigger Using a Self‐Healing Ionic Liquid Gated Transistor

High performance low temperature solution-processed zinc oxide thin film transistor

The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

Trap states and space charge limited current in dispersion processed zinc oxide thin films

Influence of stabilizers in ZnO nanodispersions on field-effect transistor device performance