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Sjoerd Haasl

Researcher at Royal Institute of Technology

Publications -  48
Citations -  558

Sjoerd Haasl is an academic researcher from Royal Institute of Technology. The author has contributed to research in topics: Surface micromachining & Waveguide. The author has an hindex of 13, co-authored 48 publications receiving 527 citations. Previous affiliations of Sjoerd Haasl include Chalmers University of Technology.

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Proceedings ArticleDOI

Arrays of monocrystalline silicon micromirrors fabricated using CMOS compatible transfer bonding

TL;DR: In this article, a CMOS compatible fabrication of monocrystalline silicon micromirror arrays using membrane transfer bonding is presented, which can be applied for integration of CMOS circuits with any type of transducer that consists of membranes and that benefits from the use of high temperature annealed or mon-stalline materials.
Journal ArticleDOI

Polymer Gap Adapter for Contactless, Robust, and Fast Measurements at 220–325 GHz

TL;DR: In this article, a metamaterial-based gap adapter was proposed to prevent radiation leakages in the presence of gaps at the interconnects of a waveguide component, which can be used to perform fast measurements, since the normal flange screws are redundant.
Journal ArticleDOI

Breath Analyzer for Alcolocks and Screening Devices

TL;DR: A new breath analyzer prototype is demonstrated, with the prospects of eliminating the mouthpiece, reducing expiration time and volume, improving long-term stability, and reducing life cycle cost.
Journal ArticleDOI

Rapid melting curve analysis on monolayered beads for high-throughput genotyping of single-nucleotide polymorphisms.

TL;DR: A rapid solid-phase melting curve analysis method for single-nucleotide polymorphism (SNP) genotyping based on random bead immobilization by microcontact printing, enabling ultrarapid SNP analysis.
Journal ArticleDOI

Micromachined ridge gap waveguide and resonator for millimeter-wave applications

TL;DR: A ridge gap waveguide and a ridge gap resonator have been fabricated for the frequencies 220-325 GHz using MEMS technology in this paper, where the reflection coefficient is below −15 dB between 240 and 340 GHz.