This paper describes the ATLAS experiment as installed in i ts experimental cavern at point 1 at CERN. It also presents a brief overview of the expec ted performance of the detector.

http://absimage.aps.org/image/SES08/MWS_SES08-2008-020010.pdf

The ATLAS Experiment at the CERN Large Hadron Collider

Simulation and the monte carlo method

Magnesium Oxide (MgO).- Zincblende Magnesium Sulphide (?-MgS).- Zincblende Magnesium Selenide (?-MgSe).- Zincblende Magnesium Telluride (?-MgTe).- Zinc Oxide (ZnO).- Wurtzite Zinc Sulphide (?-ZnS).- Cubic Zinc Sulphide (?-ZnS).- Zinc Selenide (ZnSe).- Zinc Telluride (ZnTe).- Cubic Cadmium Sulphide (c-CdS).- Wurtzite Cadmium Sulphide (w-CdS).- Cubic Cadmium Selenide (c-CdSe).- Wurtzite Cadmium Selenide (w-CdSe).- Cadmium Telluride (CdTe).- Cubic Mercury Sulphide (?-HgS).- Mercury Selenide (HgSe).- Mercury Telluride (HgTe).

Handbook on physical properties of semiconductors

For many years, most computer architects have pursued one primary goal: performance. Architects have translated the ever-increasing abundance of ever-faster transistors provided by Moore's law into remarkable increases in performance. Recently, however, the bounty provided by Moore's law has been accompanied by several challenges that have arisen as devices have become smaller, including a decrease in dependability due to physical faults. In this book, we focus on the dependability challenge and the fault tolerance solutions that architects are developing to overcome it. The two main purposes of this book are to explore the key ideas in fault-tolerant computer architecture and to present the current state-of-the-art - over approximately the past 10 years - in academia and industry. Table of Contents: Introduction / Error Detection / Error Recovery / Diagnosis / Self-Repair / The Future

Fault Tolerant Computer Architecture

Optimization of the interface between the source/drain electrode and the organic semiconductor is one of the important factors for organic thin film transistor (OTFT) performance along with the insulator–semiconductor interface. In this Feature Article, items needed for the optimization of the metal–semiconductor interface and methods to measure interface properties are reviewed. Various electrode materials are compared in terms of the work function, contact resistance and the pentacene OTFT performance. The effect of surface modification is also discussed. Experimental data obtained in LAMP is introduced to show the effect of the various material properties more clearly.

Metal–semiconductor contact in organic thin film transistors

In this paper, we propose a new extraction method of radiation-induced oxide-trap density (/spl Delta/N/sub ot/), called Oxide-Trap based on Charge-Pumping (OTCP). This part presents the HF-OTCP method, which relies on high-frequency (HF) standard charge-pumping measurement. By applying an HF gate voltage signal, we avoid the border-trap effect in CP current (I/sub cp/) measurements. Hence, I/sub cp/ will be only due to the interface-trap contribution. We establish, using the HF-OTCP method, that /spl Delta/N/sub ot/ is only dependent on /spl Delta/V/sub th/ (threshold voltage shift) and /spl Delta/I/sub cpm/ (increase of maximum CP current), where /spl Delta/I/sub cpm/ is caused by radiation-induced interface-trap increase (/spl Delta/N/sub it/). We also clearly show that /spl Delta/V/sub th/ and /spl Delta/I/sub cpm/ can be obtained from lateral and vertical shifts of Elliot's charge-pumping curves, respectively. Thus, this new procedure allows the determination of /spl Delta/N/sub ot/ without needing any additional techniques. Finally, this procedure can be used in rapid hardness assurance test to evaluate both radiation-induced oxide and interface traps.

A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

Investigation of the effects of thermal annealing on the structural, morphological and optical properties of nanostructured Mn doped ZnO thin films

https://nottingham-repository.worktribe.com/preview/965485/Fillali%20et%20al%20.pdf

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

This paper presents different contact test structures intended to characterize the metal–semiconductor interface (aluminum–silicon) for power integrated circuits fabricated in the Application Specific Discrete (ASD™) process technologies. For this study, three contact test structures have been selected, transfer length method (TLM), cross bridge Kelvin resistance (CBKR), and contact end resistance (CER). The characterization is achieved by extracting the specific contact resistance ( ρ C ) from contact test structures by measuring the contact resistance ( R C ). To validate the results, spreading resistance was used to determine the surface doping concentration ( C S ) of the diffused layer that gives ρ C from a well know standard abacus. From the experimental results, we conclude that only the TLM test structure is able to give correct values of the specific contact resistance for both n and p type diffused layers that are compatibles with the manufacturer specifications.

A comparative study of different contact resistance test structures dedicated to the power process technology

In this work, we investigate the reliability of SiO/sub 2/ films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under constant current injection. Assuming that the logarithm of the median-time-to-failure, In(t/sub 50/), is described by a linear electric field dependence. A generalized law for the long-term reliability of the dielectric, taking into account the applied electric field and the dielectric thickness, is proposed.

Slimane Oussalah

Papers

A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

Investigation of the effects of thermal annealing on the structural, morphological and optical properties of nanostructured Mn doped ZnO thin films

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

A comparative study of different contact resistance test structures dedicated to the power process technology

On the oxide thickness dependence of the time-dependent-dielectric-breakdown