S
Soha Hassoun
Researcher at Tufts University
Publications - 104
Citations - 2290
Soha Hassoun is an academic researcher from Tufts University. The author has contributed to research in topics: Computer science & Integrated circuit. The author has an hindex of 23, co-authored 99 publications receiving 2130 citations. Previous affiliations of Soha Hassoun include Texas A&M University & University of Washington.
Papers
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Journal ArticleDOI
A 200-MHz 64-b dual-issue CMOS microprocessor
Daniel W. Dobberpuhl,R. Witek,R. Allmon,R. Anglin,D. Bertucci,S.M. Britton,L. Chao,R.A. Conrad,D.E. Dever,B. Gieseke,Soha Hassoun,G. Hoeppner,K. Kuchler,M. Ladd,B.M. Leary,L. Madden,Edward J. McLellan,D.R. Meyer,J. Montanaro,Donald A. Priore,V. Rajagopalan,S. Samudrala,S. Santhanam +22 more
TL;DR: A RISC (reduced-instruction-set computer)-style microprocessor operating up to 200 MHz, implements a 64-b architecture that provides huge linear address space without bottlenecks that would impede highly concurrent implementations.
Book
Logic Synthesis and Verification
Soha Hassoun,Tsutomu Sasao +1 more
TL;DR: Logic Synthesis and Verification provides a state-of-the-art view of logic synthesis and verification that presents key developments, outlines future challenges, and lists essential references.
Proceedings ArticleDOI
Architecture of a message-driven processor
William J. Dally,Linda Chao,Andrew A. Chien,Soha Hassoun,Waldemar Horwat,Jon Kaplan,Paul Song,Brian Totty,Scott Wills +8 more
TL;DR: Simulation results suggest that this architecture reduces message reception overhead by more than an order of magnitude and includes a novel memory organization that permits both indexed and associative accesses and that incorporates an instruction buffer and message queue.
Journal ArticleDOI
Power Delivery Design for 3-D ICs Using Different Through-Silicon Via (TSV) Technologies
TL;DR: It is shown that it is possible to achieve 2-D-like, or even better, power quality by increasing C4 granularity and by selecting suitable TSV size and spacing and this is the first detailed architectural-level analysis for 3-D power delivery.
Proceedings ArticleDOI
Gate sizing: finFETs vs 32nm bulk MOSFETs
Brian Swahn,Soha Hassoun +1 more
TL;DR: The gate sizing of finFET devices is investigated, and a comparison with 32nm bulk CMOS is provided, showing thatfinFET circuits are superior in performance and produce less static power when compared to 32nm circuits.