S
Sohachi Iwai
Publications - 48
Citations - 851
Sohachi Iwai is an academic researcher. The author has contributed to research in topics: Atomic layer epitaxy & Epitaxy. The author has an hindex of 13, co-authored 48 publications receiving 833 citations.
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Self‐assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant
TL;DR: In this paper, a two-dimensional growth mode (step flow) of GaN quantum dots on AlxGa1−xN (x=0-0.2) surfaces that is energetically commenced under the conventional growth conditions was intentionally modified into a three-dimensional mode by using a "surfactant" to inhibit the GaN film from wetting the AlGaN surface.
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The formation of GaN dots on AlxGa1−xN surfaces using Si in gas-source molecular beam epitaxy
TL;DR: In this paper, the growth mode of GaN was changed from two-dimensional to three-dimensional by introducing Si on the AlxGa1−xN/6H-SiC(0001) surface.
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Characteristics of laser metalorganic vapor‐phase epitaxy in GaAs
TL;DR: Growth characteristics of a laser metalorganic vapor phase epitaxy (laser MOVPE) and the electrical and optical properties of the epitaxial layer grown by the technique are examined in this paper.
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Atomic layer epitaxy of AlP and its application to X-ray multilayer mirror
TL;DR: In this paper, an AlPGaP multilayer mirror with a reflectivity in excess of 10% is realized by ALE at the wavelength of the L absorption edge of Al in AlP.
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A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs
TL;DR: In this paper, a new growth model for metalorganic vapor phase epitaxy of GaAs is proposed, where surface reactions for trimethyl gallium or triethylgallium adsorbed on the substrate surfaces are assumed to be the growth-rate-limiting steps.