Scanning electronic microscopy (SEM) was used in this work in order to study the surface quality of Lead Telluride (PbTe), n-type, epitaxial layers, grown directly over single crystal Silicon (Si) p-type wafers. The n-PbTe/p-Si heterojunction is used as thermal infrared (IR) detector, which work at room temperature. Besides the epilayers quality, it was also planned, to improve the cleaning Si surface procedure, decide which substrate resistivity is more appropriated and at what thickness the epilayers absorb more infrared radiation.

Study of PbTe Epitaxial Layers Grown Directly Over Silicon Wafers

Semiconductors Compound Films with Optoeletronic Appliqued

Modified LPE system used to diffuse Cd to obtain InSb infrared detectors

Analyzes generates by Scanning Electronic Microscopy (SEM/BSE), Fourier Transform Infrared Spectroscopy (FTIR) and X‐Ray Diffraction (XRD) were used in order to compare epitaxial layers of PbSnTe, grown high quality crystalline by Hot Wall Beam Epitaxy—HWBE technique, directly over single crystal BaF2 wafers, p type The PbSnTe/BaF2 heterostructures were analyzed electrically by Hall Effect (HE), in electrical contacts in the PbSnTe layers (Van der Pauw method), and optoeletronic by Detectivity (D), are used as thermal infrared detectors that work with the wavelength—3 μm<λ<14 μm at 77 K temperature

Sônia Guimarães

Papers

Study of PbTe Epitaxial Layers Grown Directly Over Silicon Wafers

Semiconductors Compound Films with Optoeletronic Appliqued

Modified LPE system used to diffuse Cd to obtain InSb infrared detectors

Thin Films IV‐VI Semiconductors Compounds with Applications in Optoelectronic Devices by HWBE Growth Technique

HWBE and FE Growths Techniques of the Semiconductors Compounds with Applications in Thermal Infrared Devices