Showing papers by "Stefan W. Glunz published in 2023"
TL;DR: In this article , a planar front/ rear side-textured silicon heterojunction bottom solar cell with a p-i-n perovskite top solar cell that yields a high certified short-circuit current density of 19.6
Abstract: Perovskite silicon tandem solar cells can overcome the efficiency limit of silicon single‐junction solar cells. In two‐terminal perovskite silicon tandem solar cells, current matching of subcells is an important requirement. Herein, a current‐matched tandem solar cell using a planar front/ rear side‐textured silicon heterojunction bottom solar cell with a p–i–n perovskite top solar cell that yields a high certified short‐circuit current density of 19.6 mA cm−2 is reported. Measures taken to improve the device are guided by optical simulation and a derived optical roadmap toward maximized tandem current density. To realize current matching of the two subcells, variation of the perovskite bandgap from ≈1.68 to 1.64 eV and thickness is investigated. Spectrometric characterization, in which current–voltage curves of tandem devices are recorded at systematically varied spectral irradiance conditions, is applied to determine the current matching point. In addition, remaining device limitations such as nonradiative recombination at the perovskite's interfaces are analyzed. Replacing the hole transport layer PTAA by 2PACz results in an overall certified power conversion efficiency of up to 26.8%. Precise simulation based on the device structure is essential as it provides efficient paths toward improving the device efficiency.
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TL;DR: In this paper , the authors define a set of quality functions that can be evaluated unambiguously for any given device and that provide useful metrics for all operating scenarios, and demonstrate a method to calculate a quality function for each mode from the parameters of an equivalent circuit model.
Abstract: Monolithically integrated photosupercapacitors and photobatteries (photostorage devices) are a growing field of research and development. Yet there is currently no universally agreed-upon figure of merit for these devices that is independent of arbitrary testing parameters and also applicable to all possible operating scenarios. In this work we address this issue by introducing a way of defining a set of quality functions that can be evaluated unambiguously for any given device and that provide useful metrics for all operating scenarios. This is achieved by first identifying three distinct fundamental modes of operation for a photostorage device. Secondly we demonstrate a method to calculate a quality function for each mode from the parameters of an equivalent circuit model. This strategy avoids using variable physical parameters to evaluate a real device, such as a capacitance that depends on an arbitrary charging or discharging current. Rather, the combination of the three fundamental modes of operation and the constant nature of the model parameters allows a rigid definition of the quality of a device and reliable predictions of its performance under any conditions. This could serve to better compare the performance of photostorage devices and to determine design criteria in view of specific applications.
TL;DR: In this paper , the effect of various plasma treatments performed at different stages during the ALD deposition of Al2O3/SiO2 multilayers on the silicon surface passivation quality is evaluated.
Abstract: Al2O3 is one of the most effective dielectric surface passivation layers for silicon solar cells, but recent studies indicate that there is still room for improvement. Instead of a single layer, multilayers of only a few nanometers thickness offer the possibility to tailor material properties on a nanometer scale. In this study, the effect of various plasma treatments performed at different stages during the ALD deposition of Al2O3/SiO2 multilayers on the silicon surface passivation quality is evaluated. Significant improvements in surface passivation quality for some plasma treatments are observed, particularly for single Al2O3/SiO2 bilayers treated with a H2 plasma after SiO2 deposition. This treatment resulted in a surface recombination parameter J0 as low as 0.35 fA cm−2 on (100) surfaces of 10 Ω cm n‐type silicon, more than a factor of 5 lower than that of Al2O3 single layers without plasma treatment. Capacitance‐voltage measurements indicate that the improved surface passivation of the plasma‐treated samples results from an enhanced chemical interface passivation rather than an improved field effect. In addition, a superior temperature stability of the surface passivation quality is found for various plasma‐treated multilayers.
TL;DR: In this article , the authors investigate the individual stages of tandem-relevant 1.66 eV bandgap perovskite formation and map the structural evolution from the precursor to the perovsite phase until the degradation phase.
Abstract: The hybrid evaporation/spin-coating route has been widely used for fabrication of highly efficient fully textured perovskite silicon tandem solar cells and is a promising route for upscaling. Nevertheless, fundamental aspects of the fabrication process such as the kinetics of perovskite crystallization and the influence of the environmental conditions remain uncertain. In this work, we investigate the individual stages of tandem-relevant 1.66 eV bandgap perovskite formation and map the structural evolution from the precursor to the perovskite phase until the degradation phase. We find that the kinetics of these transitions can be tuned by varying the humidity or the temperature during the annealing treatment. Specifically, increasing the relative humidity up to 50% elevates the reaction rate and results in improved perovskite quality. This is directly reflected in the solar cell power conversion efficiency with a 3%abs increment on average. While high annealing temperatures are found to promote large grain size growth and enhanced crystallinity, we observe that above 150 °C the remnant PbI2 precursor compromises film quality. Furthermore, the perovskite formation kinetics is fitted using the Johnson–Mehl–Avrami–Kolmogorov model. The Avrami constant is found in the range 0.66–0.87, indicating a diffusion-controlled one-dimensional growth process with an associated activation energy of 54.49 kJ/mol. Using in situ XRD, this work gives insights on key process parameters to ensure reproducible synthesis of high-quality perovskite films.
TL;DR: In this paper , the double perovskite Cs2AgBiBr6 as a powder, obtained via spray-drying, is reported to be capable of paving the way toward large scale production.
Abstract: Nontoxic, all-inorganic perovskite light absorbers have received a great deal of attention in recent years due to their potential to replace lead-containing perovskite materials in photovoltaics. Herein, the synthesis of the lead-free double perovskite Cs2AgBiBr6 as a powder, obtained via spray-drying, is reported to be capable of paving the way toward large scale production. Upon drying of the atomized precursor solution during spray-drying, the double-perovskite phase forms by in situ crystallization. The product that is obtained from spray-drying is compared to the one that is obtained from the so-called solution cooling method, which is often used for the absorber synthesis before dissolving the double perovskite powder for the thin film deposition. The absorber powder gained from the solution cooling method sets the benchmark for the spray-dried absorber powder. XRD and Raman analyses confirm the phase purity of the double perovskite, whereas UV–Vis spectroscopy confirms the desired bandgap. Furthermore, the absorber powders from both synthesis methods are successfully used to deposit and integrate absorber films in single-junction perovskite solar cells. Besides being introduced as an alternative synthesis route for the preparation of double perovskite absorber as dry powders independently from being applied onto a given substrate, the superior advantages of spray-drying compared to the conventional synthesis of the perovskite absorber via the solution cooling method are outlined: Spray-drying not only enables the synthesis of large amounts of perovskite absorber powders but also discards the usage of precarious solvents like concentrated hydrobromic acid and thus eliminates the need for extensive safety precautions. Hence, spray-drying may help the perovskite technology take the next step toward large-scale production and commercialization.