Physical Review B

where A represents the magnetic vector potential, is an integral of the hydromagnetic equations. This -integral made it possible to formulate a variational principle for the force-free magnetic fields. The integral expresses the fact that motions cannot transform a given field in an entirely arbitrary different field, if the conductivity of the medium isconsidered infinite. In this paper we shall show that the full set of hydromagnetic equations admit five more integrals, besides the energy integral, if dissipative processes are absent. These integrals, as we shall presently verify, are I2 =fbHvdV, (2)

Proceedings of the National Academy of Sciences

Journal of Physics Condensed Matter: Preface

Advances in physics

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

We designed, fabricated and measured the performance of nanoelectromechanical (NEMS) switches. Initial data are reported with one of the switch designs having a measured switching time of 400 ns and an operating voltage of 5 V. The switches operated laterally with unmeasurable leakage current in the 'off' state. Surface micromachining techniques were used to fabricate the switches. All processing was CMOS compatible. A single metal layer, defined by a single mask step, was used as the mechanical switch layer. The details of the modeling, fabrication and testing of the NEMS switches are reported.

https://iopscience.iop.org/article/10.1088/0960-1317/19/8/085003/pdf

A nanomechanical switch for integration with CMOS logic

We have fabricated, tested and analyzed the reliability of Pt- and RuO2-coated ohmic microrelays in ultra-high purity gas environments. RuO2-coated relays could survive 3 × 108 contact cycles without electrical degradation, while Pt-coated devices degraded after 105 cycles. Thermally actuated microrelays were fabricated using a process that employed a polysilicon surface-micromachined substructure. After releasing the devices, just a few blanket metal depositions were required to create the different coatings. This method allowed direct comparisons between different coating materials, and was enabled by a self-aligned shadow mask that provides electrical isolation between different traces. Testing was performed in a clean environment achieved through in situ ultra-high vacuum bakeouts, chamber cooling to <5  ×  10−9 Torr and chamber refill with ultra-high purity gases. The RuO2 coatings were formed by two avenues—reactive sputtering and thermal oxidation. No significant difference in contact resistance or reliability was detected for these two deposition methods. For all coatings, post-test analysis by scanning electron microscopy and Auger electron spectroscopy indicated no difference in carbon concentration on real contact versus non-contacting areas, implying that carbon did not play a role in limiting the switches’ reliability. The Pt-coated switch reliability limit was attributed to surface wear rather than to the growth of a contaminating film. For the RuO2 switches, trace resistance was reduced by ten times using an Al underlayer, so that the total device resistance was compatible with commercial device requirements. Because RuO2 is expected to be resistant to hydrocarbon contamination, this work shows that the RuO2 coating provides a promising path toward achieving ultra-high reliability ohmic microswitches.

https://iopscience.iop.org/article/10.1088/0960-1317/22/10/105027/pdf

Design, fabrication, performance and reliability of Pt- and RuO2-coated microrelays tested in ultra-high purity gas environments

The effect of Cr doping on electrical and optical properties of CrxV1−xO2 thin films across the metal-insulator transition has been studied. Resistance, Hall effect, and infrared reflectance show that Cr doping systematically increases the transition temperature Tc from 59 °C at x = 0 to 70 °C at x = 0.11 with similar transition width and hysteresis from DC to infrared, but the effect appears to saturate. The conductance contrast between insulating and metallic phases decreases with Cr doping. The effects of carrier density and mobility changes across Tc will be discussed.

Electrical and optical characterization of the metal-insulator transition temperature in Cr-doped VO2 thin films

Electrical and Optical Characterization of the Metal-Insulator Transition Temperature in Cr-doped VO2 Thin Films.

The human brain (volume=1200cm3) consumes 20W and is capable of performing>10%5E16 operations/s. Current supercomputer technology has reached 1015 operations/s, yet it requires 1500m%5E3 and 3MW, giving the brain a 10%5E12 advantage in operations/s/W/cm%5E3. Thus, to reach exascale computation, two achievements are required: 1) improved understanding of computation in biological tissue, and 2) a paradigm shift towards neuromorphic computing where hardware circuits mimic properties of neural tissue. To address 1), we will interrogate corticostriatal networks in mouse brain tissue slices, specifically with regard to their frequency filtering capabilities as a function of input stimulus. To address 2), we will instantiate biological computing characteristics such as multi-bit storage into hardware devices with future computational and memory applications. Resistive memory devices will be modeled, designed, and fabricated in the MESA facility in consultation with our internal and external collaborators.

Steven L. Wolfley

Papers

A nanomechanical switch for integration with CMOS logic

Design, fabrication, performance and reliability of Pt- and RuO2-coated microrelays tested in ultra-high purity gas environments

Electrical and optical characterization of the metal-insulator transition temperature in Cr-doped VO2 thin films

Electrical and Optical Characterization of the Metal-Insulator Transition Temperature in Cr-doped VO2 Thin Films.

A comprehensive approach to decipher biological computation to achieve next generation high-performance exascale computing.