Nanotube films and articles and methods of making the same are disclosed. A conductive article includes an aggregate of nanotube segments in which the nanotube segments contact other nanotube segments to define a plurality of conductive pathways along the article. The nanotube segments may be single walled carbon nanotubes, or multi-walled carbon nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. The articles so formed may be disposed on substrates, and may form an electrical network of nanotubes within the article itself. Conductive articles may be made on a substrate by forming a nanotube fabric on the substrate, and defining a pattern within the fabric in which the pattern corresponds to the conductive article. The nanotube fabric may be formed by growing the nanotube fabric on the substrate using a catalyst, for example, in which the catalyst is a gas phase catalyst, or in which the catalyst is a metallic gas phase catalyst. The nanotube fabric may be formed by depositing a solution of suspended nanotubes on the substrate. The deposited solution may be spun to create a spin-coating of the solution. The solution may be deposited by dipping the substrate into the solution. The nanotube fabric is formed by spraying an aerosol having nanotubes onto a surface of the substrate.

Methods of nanotube films and articles

A liquid crystal display device and a method of manufacturing the same. The liquid crystal display device includes a plurality of pixel cells on a substrate and a common voltage line. The common voltage line provides a common voltage to the pixel cells, and includes first to third s interconnection patterns which are sequentially stacked over the substrate. Each of the pixel cells includes a storage capacitor which includes a lower electrode, and an upper electrode over the lower electrode. The second interconnection pattern includes the same material as a material of the upper electrode, and is formed in the same process as a process of the upper electrode.

Liquid crystal display device and method of manufacturing the same

A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer

Magnetoresistive element and magnetic memory device

Nanotube films and articles and method of making the same are disclosed. A conductive article (1800) includes an aggregate of nanotube segments in which the nanotube segments (1802) contact other nanotube segments (101) to define a plurality of conductive pathway along the article. The nanotube segments (1802) may be single walled carbon nanotubes, or multi-walled carbon nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. The articles so formed may be disposed on substrates, and may form an electrical network of nanotubes within the article itself.

Nanotube films and articles

Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.

Electromechanical memory array using nanotube ribbons and method for making same

A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a "pinned" ferromagnetic layer whose magnetization is oriented in the plane of the layer but is fixed so as to not be able to rotate in the presence of an applied magnetic field in the range of interest, a "free" ferromagnetic layer whose magnetization is able to be rotated in the plane of the layer relative to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier layer located between and in contact with both ferromagnetic layers. The pinned ferromagnetic layer is pinned by interfacial exchange coupling with an adjacent antiferromagnetic layer. The amount of tunneling current that flows perpendicularly through the two ferromagnetic layers and the intermediate tunnel barrier layer depends on the relative magnetization directions of the two ferromagnetic layers. The ferromagnetic layers are formed in two separate spaced-apart planes that do not overlap in the region of the tunnel barrier layer, thereby eliminating any extraneous magnetic poles.

Magnetic tunnel junctions with controlled magnetic response

A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a "pinned" ferromagnetic layer whose magnetization is oriented in the plane of the layer but is fixed so as to not be able to rotate in the presence of an applied magnetic field in the range of interest, a "free" ferromagnetic layer whose magnetization is able to be rotated in the plane of the layer relative to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier layer located between and in contact with both ferromagnetic layers. The pinned ferromagnetic layer is formed as a sandwich of two antiferromagnetically coupled ferromagnetic layers separated by a metallic layer. The free and pinned ferromagnetic layers are located in separate spaced-apart planes so as to not overlap the tunnel barrier layer. An insulating layer surrounds the lateral perimeter of at least the free ferromagnetic layer and supports an electrical lead that makes contact with the free ferromagnetic layer.

Magnetic tunnel junction device with antiferromagnetically coupled pinned layer

PROBLEM TO BE SOLVED: To control magnetoresistance response to a magnetic signal by a method wherein a constrained ferromagnetic layer, having a side part circumfer ence which is not extended over the side part circumference of an insulating tunnel layer, is retained within the another spaced plane surface without overlap ping with an insulating tunnel layer. SOLUTION: Write in an MJT is attained by allowing a current to flow through the upper and lower electrode wiring layers on the memory cell application of a magnetic tunnel junction MTJ element. When a sufficiently large current is allowed to flow through the above-mentioned lines, the magnetization direction of a free ferromagnetic layer 32 is rotated in reverse parallel from parallel to the magnetization direction of a constrained ferromagnetic layer 18 by the coupled magnetic field formed in the vicinity of a free ferromagnetic layer 32. Current level is selected in such a manner that the coupling magnetic field to be formed exceeds the switching field of the free ferromagnetic layer. The magnetic field formed by a coupling write-in current is selected smaller than the magnetic field required for rotation of the magnetization direction of the constrained ferromagnetic layer.

Stuart Stephen Papworth Parkin

Papers

Magnetic tunnel junctions with controlled magnetic response

Magnetic tunnel junction device with antiferromagnetically coupled pinned layer

Magnetic tunnel junction capable of control magnetic response