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Sukanta Bose

Researcher at Indian Institute of Engineering Science and Technology, Shibpur

Publications -  33
Citations -  166

Sukanta Bose is an academic researcher from Indian Institute of Engineering Science and Technology, Shibpur. The author has contributed to research in topics: Solar cell & Thin film. The author has an hindex of 6, co-authored 26 publications receiving 91 citations.

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Modification of surface morphology of sputtered AZO films with the variation of the oxygen

TL;DR: In this article, the effects of oxygen gas concentration ratio on structural, electrical and optical properties of the deposited al doped Zinc Oxide (AZO) thin films were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall effect, ellipsometry and UV-visible spectrophotometer measurements.
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Study of the properties of SiOx layers prepared by different techniques for rear side passivation in TOPCon solar cells

TL;DR: In this article, the authors investigated the passivation of n-type and p-type monocrystalline CZ Si wafers (both polished and textured) with silicon oxide layers prepared by thermal (TO), chemical (CO) and plasma (PO) techniques.
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Design Analysis of Heterojunction Solar Cells with Aligned AZO Nanorods Embedded in p-type Si wafer

TL;DR: In this paper, the authors explored the possibility of producing photovoltaic materials by employing RF sputtering and hydrothermal technologies, which has the potential of attaining lower cost of production of heterojunction silicon solar cells.
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Evolution of PERC from Al-BSF: optimization based on root cause analysis

TL;DR: In this paper, the IR laser and RIE etcher were used for the fabrication of PERC solar cells using p-type wafers of rather modest quality (minority carrier lifetime of ≥10 µs).
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Optimization of back ITO layer as the sandwiched reflector for exploiting longer wavelength lights in thin and flexible (30 µm) single junction c-Si solar cells

TL;DR: In this article, an indium tin oxide (ITO) layer both on top and at the bottom of the silicon wafer was introduced to address better carrier collection in thin silicon as well as light management.