This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMs

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

In this review we present a short overview of the main fields of application of mesoporous ordered films obtained via templating self-assembly. These materials, because of their very special properties such as high surface area, ordered porosity, versatile functionalization of the pore surface, have been widely used for developing advanced functional applications. Mesoporous ordered films have also shown a high capability of integration in current material processing technologies also taking advantage of the high flexibility of the synthesis. A surprisingly large variety of devices and applications have been developed so far which ranges from sensors to supercapacitors and biodevices. All these applications have in common the exploitation of ordered porosity on the mesoscale and in general a strong dependence on pore topology, the nature of the pore surface and pore accessibility has been demonstrated for most of the cases. Even if a high number of examples of applications have been reported still many more are expected to come in the near future.

Mesoporous thin films: properties and applications

Design and manufacturing of stainless steel bipolar plates for proton exchange membrane fuel cells

SiO2 modified polyethyleneimine-based nanofiltration membranes for dye removal from aqueous and organic solutions

A flexible photoelectrode for CdS/CdSe quantum dot-sensitized solar cells (QDSSCs)

Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr0.7Ca0.3MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

Sun Gyu Choi

Papers

A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

The properties of silica aerogels hybridized with SiO2 nanoparticles by ambient pressure drying

Improvement of uncooled infrared imaging detector by using mesoporous silica as a thermal isolation layer

Application of mesoporous TiO2 as a thermal isolation layer for infrared sensors

Properties of amorphous silicon thin films synthesized by reactive particle beam assisted chemical vapor deposition