Researchers used an inverse design algorithm and experimentally demonstrated an integrated polarization beamsplitter with a footprint of 2.4 × 2.4 μm2.

An integrated-nanophotonics polarization beamsplitter with 2.4 × 2.4 μm2 footprint

Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator), which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (de)multiplexers, and high-extinction-ratio polarizers. Newly developed photonic components could allow large-scale photonic integrated circuits to be built on silicon substrates. Daoxin Dai from Zhejiang University, China, alongside co-workers from the University of California, USA, have proposed several new optical technologies for use in photonic integrated circuits, which substitute or work alongside electrical circuits in optical devices. The researchers have designed new ultrashort polarization-handling devices that split high-intensity beams of light, and a ring optical isolator that reduces reflections. The team have also created a new waveguide based on silicon nitride that can guide optical waves with a minimal loss of energy. These new technologies will allow scientists to construct higher performance, more compact optical devices.

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Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

Brain computer interface: control signals review

The physical layer of an optical network is vulnerable to a variety of attacks, including jamming, physical infrastructure attacks, eavesdropping, and interception. As the demand for network capacity grows dramatically, the issue of securing the physical layer of optical network cannot be overlooked. In this survey paper, we discuss the security threats in an optical network as well as present several existing optical techniques to improve the security. In the first part of this paper, we discuss various types of security threats that could appear in the optical layer of an optical network, including jamming, physical infrastructure attacks, eavesdropping, and interception. Intensive research has focused on improving optical network security, in the above specific areas. Real-time processing of the optical signal is essential in order to integrate security functionality at the physical layer while not undermining the true value of optical communications, which is its speed. Optical layer security benefits from the unique properties of optical processing-instantaneous response, broadband operation, electromagnetic immunity, compactness, and low latency. In the second part of this paper, various defenses against the security threats outlined in this paper are discussed, including optical encryption, optical code-division multiple access (CDMA) confidentiality, self-healing survivable optical rings, anti-jamming, and optical steganography.

Optical Layer Security in Fiber-Optic Networks

Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse-electrical (TE) and transverse-magnetic (TM) modes are generally different. Polarization-dependent dispersion and polarization-dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon-on-insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.

Polarization management for silicon photonic integrated circuits

The novel design of an all-optical XOR gate by using cross-gain modulation of semiconductor optical amplifiers has been suggested and demonstrated successfully at 10 Gb/s. Boolean AB~ and A~B of the two input signals A and B have been obtained and combined to achieve the all-optical XOR gate. No additional input beam such as a clock signal or continuous wave light is used in this new design, which is required in other all-optical XOR gates.

All-optical XOR gate using semiconductor optical amplifiers without additional input beam

We report that we have successfully designed and fabricated a significantly shortened multimode interference coupler for application in polarization splitter, using a phenomenon that we termed "quasi-state" (QS) imaging effect. First, we identified and analyzed the QS imaging effect, and, based on the QS analysis, designed and fabricated a novel multimode interference (MMI) device with its split length shortened to 1/5 of a normally designed MMI split length. The fabrication is simple and cost effective and the fabricated device shows outstanding characteristics in extinction ratio, signal homogeneity, excess loss, and tolerance in the length of the splitter.

Design and fabrication of a significantly shortened multimode interference coupler for polarization splitter application

All-optical half adder using semiconductor optical amplifier based devices

Purpose The purpose of this article was to demonstrate CT and MR findings of granulosa cell tumor of the ovary. Methods MR (n = 7) and CT (n = 6) images of 11 tumors were analyzed. Uterine changes were also assessed. Results Multiseptated cystic mass (n = 4; mean, 14.5 cm) and unlobulated solid mass with internal cysts (n = 4; mean, 5.3 cm) were two common forms. Hemorrhage was found in five on MRI. Three tumors showed unusual appearances (an unilocular cystic mass, a lobulated solid mass with nonhemorrhagic cysts, and an entirely solid mass) and were not accompanied by any abnormal uterine changes, whereas all the tumors of common forms were associated with uterine changes explainable by hormonal stimuli in the postmenopausal patients. Conclusions Large multiseptated cystic mass and medium solid mass with internal cysts were two common forms. Hemorrhage was a common MR finding. Uterine changes were frequently associated with the tumors with these common findings.

Granulosa cell tumor of the ovary: common findings and unusual appearances on CT and MR.

By using the gain nonlinearity characteristics of semiconductor optical amplifier, an all-optical binary half adder at 10 Gbps is demonstrated. The half adder operates in a single mechanism, which is cross gain modulation. The half adder utilizes two logic functions of SUM and CARRY, which can be demonstrated by using XOR and AND gates, respectively. The extinction ratios of both XOR and AND gates are about 6.1 dB. By achieving this experiment, we also explored the possibilities for the enhanced complex logic operation and higher chances for multiple logic integration.

Sun Ho Kim

Papers

All-optical XOR gate using semiconductor optical amplifiers without additional input beam

Design and fabrication of a significantly shortened multimode interference coupler for polarization splitter application

All-optical half adder using semiconductor optical amplifier based devices

Granulosa cell tumor of the ovary: common findings and unusual appearances on CT and MR.

All-optical half adder using cross gain modulation in semiconductor optical amplifiers.