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Sunbo Kim

Researcher at Sungkyunkwan University

Publications -  44
Citations -  519

Sunbo Kim is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Solar cell & Heterojunction. The author has an hindex of 12, co-authored 44 publications receiving 438 citations.

Papers
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Journal ArticleDOI

Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells

Shahzada Qamar Hussain, +7 more
- 01 Mar 2014 - 
TL;DR: In this article, the influence of magnetron sputtered zirconium-doped indium tin oxide (ITO:Zr) films with high mobility and work function on the heterojunction with intrinsic thin layer (HIT) solar cell was reported.
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RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

Shahzada Qamar Hussain, +7 more
- 01 Mar 2014 - 
TL;DR: In this paper, the RF magnetron sputtered indium tin oxide (ITO) films were deposited on glass substrates with low resistivity, high transmittance and work function for various oxygen (O2) flow rates.
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Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

Sunbo Kim, +11 more
- 15 May 2013 - 
TL;DR: LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells in this paper, with optimized LiF layer thickness of 20nm, 1 cm2 heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding Voc of 690mV, Jsc of 33.62mV and cell efficiencies of 17.13%.
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Screen printed phosphorus diffusion for low-cost and simplified industrial mono-crystalline silicon solar cells

Taeyoung Kwon, +7 more
- 01 Jan 2011 - 
TL;DR: In this paper, a simple method for creating a P-N junction, with efficiency above 161%, using a screen printable phosphorus diffusion paste, was demonstrated, with an efficiency of 161% in a 100 cm×100 cm.
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Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

Cam Phu Thi Nguyen, +6 more
- 28 Feb 2017 - 
TL;DR: In this article, the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin ITO layer at the active/insulator interface was examined.