Showing papers by "Sung-min Kim published in 2010"

Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same

Abstract: In semiconductor devices, and methods of formation thereof, both planar-type memory devices and vertically oriented thin body devices are formed on a common semiconductor layer In a memory device, for example, it is desirable to have planar-type transistors in a peripheral region of the device, and vertically oriented thin body transistor devices in a cell region of the device In this manner, the advantageous characteristics of each type of device can be applied to appropriate functions of the memory device

Method for fabricating a semiconductor device

Abstract: Provided is a fabricating method of a semiconductor device The fabricating method of a semiconductor device comprises the following steps of: forming a first layer including a first material in a cavity in a semiconductor structure; performing a first heat treatment process for treating the semiconductor structure at a temperature of at least 100 degrees during a first time period, on the semiconductor structure; etching back the first layer to form a first layer with the reduced thickness; forming a second layer including a second material in the cavity; and performing a second heat treatment process for treating the semiconductor structure at a temperature of at least 100 degrees during a second time period, on the semiconductor structure so as to form the reduced first layer and the second layer into a single layer with uniform components and density

Semiconductor device having bar type active pattern and method of manufacturing the same

Abstract: PURPOSE: A semiconductor device having a bar type active pattern and a method of manufacturing the same are provided to prevent lifting of an active pattern by forming an active pattern with a silicon-germanium oxide film pattern. CONSTITUTION: A semiconductor device comprises a semiconductor substrate(100), at least one active patterns, at least one support patterns(112,117), and a gate(165). The semiconductor substrate has a first width and a second width. The semiconductor substrate comprises a semiconductor pin(105). The semiconductor pin is projected from one side of the semiconductor substrate. Active patterns are separated from the semiconductor pin. Support patterns support the active patterns. The gate surrounds a part of at least active pattern.

Semiconductor device including a crystal semiconductor layer

Abstract: In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on the semiconductor substrate. The preliminary active pattern includes a barrier pattern and a non-single crystal semiconductor pattern. A sacrificial non-single crystal semiconductor layer covers the preliminary active pattern and the semiconductor substrate. By crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern are changed to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern, respectively. The crystalline semiconductor pattern and the barrier pattern constitute an active pattern. The sacrificial crystalline semiconductor layer is removed.

P2 The expression of Galectin-1 in melanocytic nevus, dysplastic nevus and malignant melanoma

Abstract: Results Polyneoplasia in skin melanoma is revealed in 5.2 ± 0.1% cases among all melanoblastomas revealed in the Ukraine. The polyneoplasia occurrence in skin melanoma is fluctuated between 3.3 and 8.3% in different regions. Most frequent primary multiple malignant tumors are occurred in patients in skin melanoma of the head and the neck (6.6 ± 0.4%). More frequent other skin malignant tumors (40.9 ± 1.6% of all polyneoplasias) are accompanying skin melanoma. Multiple cancer is occurred more frequently in men (5.7 ± 0.7%) with malignant skin melanoma comparing to women (4.9 ± 0.7%). Most frequent skin melanoma is synchronically diagnosed in polyneoplasias (48.3 ± 1.6%) there is the synchronous detection of primary multiple tumors prevailed over all polyneoplasias and in all age groups. Most favourable course of skin melanoma is characteristic for metachronous type II polyneoplasia when melanoma is diagnosed after manifestation of other malignant tumor. Five-year survival rate in synchronous polyneoplasia consisted of 36.1 ± 2.3%, in type I metachronuos polyneoplasia – 40.3 ± 3.4%, and in type II metachronous polyneoplasia-61.8 ± 3.0%).