E
Eun-Jung Yun
Researcher at Samsung
Publications - 78
Citations - 1259
Eun-Jung Yun is an academic researcher from Samsung. The author has contributed to research in topics: Layer (electronics) & Transistor. The author has an hindex of 21, co-authored 78 publications receiving 1259 citations.
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Patent
Semiconductor device including FinFET having metal gate electrode and fabricating method thereof
TL;DR: In this paper, a FinFET with a metal gate electrode and a fabricating method of fabrication is presented, where the active area consists of an active area formed in a semiconductor substrate and protruding from a surface of the substrate; a fin including first and second protrusions, parallel with each other.
Patent
Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell
TL;DR: In this article, a hierarchical bit line structure was proposed to increase both the integration density of the semiconductor memory device and the amount of current flowing through each of the resistive-change memory cells.
Patent
Methods of forming multi fin FETs using sacrificial fins and devices so formed
TL;DR: In this paper, a multi-fin Field Effect Transistor (FET) is constructed by forming a first fin having opposing sidewalls protruding from a substrate and epitaxially growing the second fin on the opposing sidewall.
Patent
3-Dimensional flash memory device and method of fabricating the same
TL;DR: In this paper, a 3D flash memory device is presented, which includes a gate extending in a vertical direction on a semiconductor substrate, a charge storing layer surrounding the gate, a silicon layer surrounding a charge-storing layer, a channel region vertically formed in the silicon layer, and source/drain regions vertically formed on both sides of the channel region.
Patent
Methods of forming a multi-bridge-channel MOSFET
TL;DR: In this paper, a multi-bridge channel MOSFET (MBCFET) is formed by forming a stacked structure on a substrate that includes channel layers and interchannel layers interposed between the channel layers.